O
Olivier Jambois
Researcher at University of Barcelona
Publications - 45
Citations - 969
Olivier Jambois is an academic researcher from University of Barcelona. The author has contributed to research in topics: Silicon & Electroluminescence. The author has an hindex of 16, co-authored 45 publications receiving 905 citations.
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Journal ArticleDOI
Resistive switching in silicon suboxide films
Adnan Mehonic,Sébastien Cueff,M Wojdak,Stephen Hudziak,Olivier Jambois,Christophe Labbé,Blas Garrido,Richard Rizk,Anthony J. Kenyon +8 more
TL;DR: In this article, the authors demonstrate that conduction is dominated by trap assisted tunneling through noncontinuous conduction paths consisting of silicon nanoinclusions in a highly nonstoichiometric suboxide phase.
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Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films
TL;DR: In this paper, a model taking into account SiO2 defects and nc-Si is proposed to explain the electroluminescence results, which corresponds to the radiative recombination of electron-hole pairs.
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Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
TL;DR: The estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering finds that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.
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Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions
Olivier Jambois,Yonder Berencén,Khalil Hijazi,M Wojdak,Anthony J. Kenyon,Fabrice Gourbilleau,Richard Rizk,B. Garrido +7 more
TL;DR: In this paper, the current transport and electroluminescence properties of metal oxide semiconductor (MOS) devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering.
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Photoluminescence properties of size-controlled silicon nanocrystals at low temperatures
TL;DR: In this paper, the authors investigated the temperature dependence of photoluminescence spectra of silicon nanocrystals (Si-ncs) embedded in SiO2 from 5 to 300 K.