We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

As they travel through space, some light beams rotate. Such light beams have angular momentum. There are two particularly important ways in which a light beam can rotate: if every polarization vector rotates, the light has spin; if the phase structure rotates, the light has orbital angular momentum (OAM), which can be many times greater than the spin. Only in the past 20 years has it been realized that beams carrying OAM, which have an optical vortex along the axis, can be easily made in the laboratory. These light beams are able to spin microscopic objects, give rise to rotational frequency shifts, create new forms of imaging systems, and behave within nonlinear material to give new insights into quantum optics.

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Orbital angular momentum: origins, behavior and applications

The fact that light carries both linear and angular momentum is well-known to physicists. One application of the linear momentum of light is for optical tweezers, in which the refraction of a laser beam through a particle provides a reaction force that draws the particle towards the centre of the beam. The angular momentum of light can also be transfered to particles, causing them to spin. In fact, the angular momentum of light has two components that act through different mechanisms on various types of particle. This Review covers the creation of such beams and how their unusual intensity, polarization and phase structure has been put to use in the field of optical manipulation.

Tweezers with a twist

We propose a method for three-dimensional microfabrication with photopolymerization stimulated by two-photon absorption with a pulsed infrared laser An experimental system for the microfabrication has been developed with a Ti:sapphire laser whose oscillating wavelength and pulse width are 790 nm and 200 fs, respectively The usefulness of the proposed method has been verified by fabrication of several kinds of microstructure by use of a resin consisting of photoinitiators, urethane acrylate monomers, and urethane acrylate oligomers

Three-dimensional microfabrication with two-photon-absorbed photopolymerization.

Optical trapping and directional high‐speed rotation by radiation pressure are demonstrated for anisotropic micro‐objects fabricated by reactive ion‐beam etching. These micro‐objects, which have shape dissymmetry (not bilateral symmetry but rotational symmetry) in the horizontal cross section, rotate about the laser beam axis in the designed direction in a liquid medium (e.g., water or alcohol). The rotation speed is almost proportional to the input laser power.

Optically induced rotation of anisotropic micro‐objects fabricated by surface micromachining

Room‐temperature continuous‐wave (cw) operation is achieved in the MBE (molecular‐beam epitaxy)‐grown InGaP/InGaAlP double‐heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm2, respectively. This result is achieved by the introduction of H2 into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction‐band discontinuity ΔEc is estimated to be 0.43 of the band‐gap difference ΔEg. Furthermore, the multiquantum‐well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 °C. Room‐temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm2. cw ope...

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

GaAs dry etching using reactive–fast‐atom beam etching to obtain an etched mirrorlike surface is investigated. An etch rate of 0.1–0.6 μm/min is obtained when Cl2 gas is used, which is 50–100 times faster than when Ar gas is used. The etch rate ratio between GaAs and photoresist AZ‐1350J is more than 30. As a result, a trench with a depth of more than 10 μm and a width of less than 2 μm is easily fabricated under the etch conditions of a Cl2 gas pressure of 5–6.5×10−2 Pa, an accelerate voltage of 1.5–1.8 kV, and a substrate temperature of about 100 °C. The radiation damage caused by this etching is very small, and it is similar to that caused by wet chemical etching, in spite of the relatively higher accelerator voltage. The thickness of an induced damage layer is only 150 A. It is found that the radiation damage induced by reactive–fast‐atom beam etching decreased with an increase of the etch rate. It is confirmed that vertical, smooth, damage‐free etching can be easily attained with reactive–fast‐atom b...

Reactive–fast‐atom beam etching of GaAs using Cl2 gas

The properties of a deep electron trapping center found in Si‐doped In0.51Ga0.49−xAlxP (x=0.24) grown on Si‐doped GaAs(100) substrates using molecular‐beam epitaxy are studied. The trapping parameters for this center are determined as follows: thermal activation energy 0.48 eV, photoionization energy 1.25 eV, and capture barrier 0.10 eV. The concentration of this center is about seven times as high as that of the shallow donor state and is found to increase with an increasing amount of Si atoms incorporated into the crystal. The thermally activated persistent behaviors of photocarriers are also observed at low temperatures. These results suggest that this center can be regarded as a kind of DX center originally found in AlGaAs, which should be depicted as a state with large lattice relaxation using a configuration coordinate diagram.

Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy

A cantilever resonant microbeam, laser diodes, and a photodiode have been fabricated on the surface of a gallium arsenide substrate. The microbeam is excited photothermally by light from a laser diode. The vibration is detected with a photodiode as the variation in light output caused by the difference in optical length between the microbeam and another laser diode. A high carrier-to-noise ratio (45 decibels) is achieved with a short (3 micrometers) external cavity length. Such a small distance allows a lensless system, which increases the ease of fabrication. This work could lead to applications in which photomicrodynamic systems are monolithically integrated on a gallium arsenide substrate with surface micromachining technology.

https://science.sciencemag.org/content/sci/260/5109/786.full.pdf

Hidenao Tanaka

Papers

Optically induced rotation of anisotropic micro‐objects fabricated by surface micromachining

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Reactive–fast‐atom beam etching of GaAs using Cl2 gas

Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy

A Photomicrodynamic System with a Mechanical Resonator Monolithically Integrated with Laser Diodes on Gallium Arsenide