Hidetaka Sawada

TL;DR: A spherical aberration-corrected electron microscope has been developed recently, which is equipped with a 300-kV cold field emission gun and an objective lens of a small chromatic aberration coefficient, and the observed image was compared with a simulated image obtained by dynamical calculation.

Abstract: Sublattice reversal epitaxy is demonstrated in lattice-matched GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed by reflection high energy electron diffraction and preferential etching. In the GaAs/Ge/GaAs (100) system, the sublattice reversal is assisted by self-annihilation of the antiphase domains generated at the GaAs/Ge interface. In the GaAs/Ge/GaAs (111) system, the sublattice reversal results from the unique structure of the As-terminated Ge (111) surfaces. The quality of the sublattice-reversed GaAs crystal is investigated using cross-sectional transmission electron microscopy. A method to fabricate a periodically domain-inverted structure using sublattice reversal epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.

TL;DR: In this article, the origin of band-$A$ emission in homoepitaxial diamond thin films grown using microwave-plasma chemical vapor deposition (CVD) was studied by scanning cathodoluminescence (CL) measurements, high-resolution transmission electron microscopy (HRTEM), and electron energy loss spectroscopy (EELS).

TL;DR: In this article, a new concept of a spherical aberration correction system using three dodecapoles is proposed, which compensates for higher order aberration of 6-fold astigmatism, which generally limits a uniform phase area for image forming and probe forming in an electron microscope.

TL;DR: A spherical aberration (Cs)-corrected electron microscope for probe- and image-forming systems using hexapole correctors is developed and evaluated experimentally.