H
Hirokazu Fukidome
Researcher at Tohoku University
Publications - 123
Citations - 1789
Hirokazu Fukidome is an academic researcher from Tohoku University. The author has contributed to research in topics: Graphene & Silicon. The author has an hindex of 22, co-authored 117 publications receiving 1595 citations. Previous affiliations of Hirokazu Fukidome include Agere Systems & Osaka University.
Papers
More filters
Journal ArticleDOI
Graphene-based devices in terahertz science and technology
Taiichi Otsuji,S. Boubanga Tombet,Akira Satou,Hirokazu Fukidome,Maki Suemitsu,Eiichi Sano,Vyacheslav V. Popov,Maxim Ryzhii,Victor Ryzhii +8 more
TL;DR: Graphene is a one-atom-thick planar sheet of a honeycomb carbon crystal and its gapless and linear energy spectra of electrons and holes lead to nontrivial features such as giant carrier mobility and broadband flat optical response as discussed by the authors.
Journal ArticleDOI
Epitaxial graphene on silicon substrates
Maki Suemitsu,Hirokazu Fukidome +1 more
TL;DR: By forming an ultrathin (~100?nm) SiC film on Si substrates and by annealing it at ~1500?K in vacuo, few-layer graphene is formed on Si substrate as discussed by the authors.
Journal ArticleDOI
Adsorption of CO2 on Graphene: A Combined TPD, XPS, and vdW-DF Study
Kaori Takeuchi,Susumu Yamamoto,Yuji Hamamoto,Yuichiro Shiozawa,Keiichiro Tashima,Hirokazu Fukidome,Takanori Koitaya,Kozo Mukai,Shinya Yoshimoto,Maki Suemitsu,Yoshitada Morikawa,Jun Yoshinobu,Iwao Matsuda +12 more
TL;DR: In this article, the adsorption of CO2 molecules on monolayer epitaxial graphene on a SiC(0001) surface at 30 K was investigated by temperature-programmed desorption and X-ray photoelectron spectroscopy.
Journal ArticleDOI
Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate
Yu Miyamoto,Hiroyuki Handa,Eiji Saito,Atsushi Konno,Yuzuru Narita,Maki Suemitsu,Hirokazu Fukidome,Takashi Ito,Kanji Yasui,Hideki Nakazawa,Tetsuo Endoh +10 more
TL;DR: By conducting a 1200°C vacuum annealing of a 3C-SiC(111) ultrathin film preformed on a Si(110) surface, Wang et al. as discussed by the authors succeeded in forming a graphene layer on a si substrate.
Journal ArticleDOI
Epitaxial Growth Processes of Graphene on Silicon Substrates
TL;DR: In this article, a detailed structural characterization of this graphene-on-silicon (GOS) material by Raman spectroscopy and transmission-electron microscopy was conducted to obtain insights into the impacts of process parameters on defect formation.