An absorbent disposable undergarment comprises pants and an absorbent pad (3) detachably attached to the pants. First suspending flaps (20A,20B) hang down from an inner side of a stretchable waist-opening peripheral edge (16) toward a crotch section (8) of the pants. The first suspending flaps (20A,20B) are provided with first fastening means (30). Second suspending flaps (18,19) extend from longitudinally opposite ends of an absorbent core (42) of the pad. The second suspending flaps (18,19) are provided with second fastening means (51) which are releasably engaged with the first fastening means (39).

Disposable absorbent undergarment

Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Semiconductor processing system and methods using capacitively coupled plasma

An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

Semiconductor processing systems having multiple plasma configurations

Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

Apparatus and method for depositing materials onto microelectronic workpieces

Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

Integrated electroless deposition system

To an electroless nickel plating solution comprising a water-soluble nickel salt, a reducing agent, and a complexing agent is added a polythionate or dithionite. The invention also provides a high-build electroless gold plating method comprising the steps of immersing a workpiece in the electroless nickel plating bath, thereby chemically depositing a nickel coating on the workpiece, and immersing the nickel-plated workpiece in an electroless gold plating bath, thereby chemically depositing a gold coating on the workpiece.

Electroless nickel plating solution and method

The invention provides a process for electroless plating tin, lead or tin-lead alloy on copper or copper alloy using an electroless plating bath containing a water soluble tin and/or lead salt, an acid capable of dissolving the salts, and a complexing agent. The tin and/or lead content in the bath is maintained high enough to chemically deposit thick films by replenishing the tin and/or lead salt in proportion to an increase in concentration of copper ion dissolving out in the bath. Also provided is an electroless tin, lead or tin-lead alloy plating process in which a water soluble copper salt is added to a fresh bath.

Process for electroless plating tin, lead or tin-lead alloy

PURPOSE: To improve the brightness and adhesiveness of a copper plated film in low current density distribution by adding a compound containing alcoholic hydroxide group together with a well-known brightening agent or the like into an acidic copper electroplating bath. CONSTITUTION: The electroplating is executed using a copper plating bath prepared by adding one or more kinds of the compounds selected from a polyhydric alcohol such as ethylene glycol, an alkanol sulfonic acid such as isethionic acid or its salt or an alkylene oxide such as ethylene oxide and having the alcoholic hydroxide group and the molecular weight of ≤300 so as to be 0.01-3g/l in concentration, and further by adding one or more kinds of an organic thiocompound to be conventionally used such as di-n-propyl-thioether- di-3-sulfonic acid, an oxygen containing high polymer organic compound such as polyvinyl alcohol having the molecular weight of ≤500 or an organic acid amide such as acetoamide as the brightening agent, into the copper electroplating bath containing a water soluble copper salt such as copper sulfate or an acid such as sulfuric acid. COPYRIGHT: (C)1995,JPO

Additive for copper electroplating and copper electroplating bath

PROBLEM TO BE SOLVED: To provide a removal liquid for an aluminum oxide film by which a firm oxide film can easily and securely be removed without excessively etching the surface of aluminum or an aluminum alloy, and the object to be treated in which a thin film of aluminum or an aluminum alloy is deposited on the surface can also effectively be treated. SOLUTION: The removal liquid for removing an oxide film on the surface of aluminum or an aluminum alloy contains the salt of metal replaceable with aluminum, and acid. A metal film derived from the salt of the metal contained in the removal liquid can be deposited while the removal liquid suppresses its erosion as much as possible, and the removal liquid can activate the surface of the aluminum or aluminum alloy while allowing the aluminum or aluminum alloy to securely remain even in the case the aluminum or aluminum alloy is extremely thin. COPYRIGHT: (C)2004,JPO&NCIPI

Removal liquid for aluminum oxide film, and surface treatment method for aluminum or aluminum alloy

A tin or tin-lead alloy electroless plating bath comprising (A) a stannous salt or a mixture of a stannous salt and a lead salt, (B) an acid, (C) thiourea or a thiourea derivative, and (D) a reducing agent is improved by adding (E) a nonionic surfactant and optionally, (F) a cationic surfactant, a nitrogenous heterocyclic compound or a derivative thereof, or alternatively by adding (G) an ammonium or quaternary ammonium ion. From the bath, uniform films of fine grains will chemically deposit on fine pitch printed wiring boards intended for SMT.

Hiroki Uchida

Papers

Electroless nickel plating solution and method

Process for electroless plating tin, lead or tin-lead alloy

Additive for copper electroplating and copper electroplating bath

Removal liquid for aluminum oxide film, and surface treatment method for aluminum or aluminum alloy

Bath and method for the electroless plating of tin and tin-lead alloy