Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Semiconductor processing system and methods using capacitively coupled plasma

An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

Semiconductor processing systems having multiple plasma configurations

Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

Integrated electroless deposition system

An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

Electroless deposition apparatus

Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

Contact metallization scheme using a barrier layer over a silicide layer

To an electroless nickel plating solution comprising a water-soluble nickel salt, a reducing agent, and a complexing agent is added a polythionate or dithionite. The invention also provides a high-build electroless gold plating method comprising the steps of immersing a workpiece in the electroless nickel plating bath, thereby chemically depositing a nickel coating on the workpiece, and immersing the nickel-plated workpiece in an electroless gold plating bath, thereby chemically depositing a gold coating on the workpiece.

Electroless nickel plating solution and method

PURPOSE: To obtain an electroless nickel plating solution excellent in fine pattern property by adding a compound having S-S sulfur bond into an electroless nickel plating solution containing a water-soluble nickel salt, a reducing agent and a complexing agent. CONSTITUTION: The compound having S-S sulfur bond is added into the electroless nickel plating solution containing the water-soluble nickel salt, the reducing agent and the complexing agent. As the nickel salt, nickel sulfate, nickel chloride or the like is used and the quantity to be used is preferably 0.01-1mol/l. As the reducing agent, hypophosphorous acid is preferably used by 0.01-1mol/l. As the complexing agent, malic acid or the like is preferably used by 0.01-2mol/l. As the compound having S-S sulfur bond, thiosulfat dithionate, polythionate, dithinite is preferable and the quantity to be added is suitably 0.01-100mg/l. COPYRIGHT: (C)1996,JPO

Electroless nickel plating solution and plating method

An electroless nickel plating bath comprising (a) a water-soluble Nickel salt, (b) a reducing agent, (c) a complex former and (d) a compound with a sulphur-to-sulphur bond. A primer coating of Ni may be deposited by immersing the substrate in an electroless Ni plating bath containing no component (d), and then immersing the substrate in a second electroless Ni plating bath containing components (a), (b), (c) and (d). Component (d) is chosen eg from a thiosulphate, dithionate, polythionate, or dithionite.

Electroless nickel plating bath

PROBLEM TO BE SOLVED: To solve a problem of a thick-film formation of a gold plating film in a short time and the problem of fin flaws of nickel by applying a nickel plating using an electroless nickel plating soln containing an inorg sulfur compd as a gold plating pretreatment of a circuit pattern for an electronic substrate SOLUTION: An electroless gold plating is executed after applying nickel plating by using an electroless plating soln to which thiosulfate, dithionate, polythionate or dithionite having S-S sulfur bond are added The addition of the compd having S-S sulfur bond is 001-100mg/l, especially preferably 05-50mg/l, and the plating is executed by a conventional method Further, at the time of the elecroless gold plating after nickel plating with this plating soln, the plating is executed by using a plating bath containing gold cyanate as a starting material of the gold and having a pH of 4-9 COPYRIGHT: (C)1997,JPO

Takayuki Nakamura

Papers

Electroless nickel plating solution and method

Electroless nickel plating solution and plating method

Electroless nickel plating bath

Thick-film formation in electroless gold plating

Electroless nickel plating bath - containing nickel salt, reducing agent, complexing agent and a compound with sulphur to sulphur bond