Hiroshi Harima

TL;DR: In this article, the authors present the results of a joint study with the Ioffe Physico-Technical Institute, Russian Academy of Science, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia and the Belarus Academy of Sciences, Brovki 17, 220072 Minsk, Belarus.

TL;DR: Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy as discussed by the authors, and growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction.

TL;DR: In the last decade, a rapid and significant development in Raman scattering experiments on GaN and related nitride compounds has been seen as discussed by the authors, where the Γ-point phonon frequencies have been identified for both cubic and hexagonal structures of binary compounds of GaN.

TL;DR: In this article, a survey of optical absorption, photoluminescence and photomodulated reflectance spectra of single-crystalline hexagonal InN layers is presented.