T
Takashi Matsuoka
Researcher at Tohoku University
Publications - 144
Citations - 3598
Takashi Matsuoka is an academic researcher from Tohoku University. The author has contributed to research in topics: Epitaxy & Metalorganic vapour phase epitaxy. The author has an hindex of 27, co-authored 141 publications receiving 3423 citations. Previous affiliations of Takashi Matsuoka include Nippon Telegraph and Telephone.
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Optical bandgap energy of wurtzite InN
TL;DR: Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy as discussed by the authors, and growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction.
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Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
TL;DR: In this article, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated, and the photoluminescence has been observed for the first time.
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Wide-gap semiconductor InGaN and InGaALN grown by MOVPE
TL;DR: In this article, the first successful lattice-matched growth of InGaN was reported on sapphire substrates, where the x-ray diffraction line width was about 20% smaller than that of films grown on the same substrate.
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Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC
Toru Sasaki,Takashi Matsuoka +1 more
TL;DR: In this article, single-crystal gallium nitride was grown on each of the two polar planes of 6H-silicon carbide substrates utilizing metal-organic vapor phase epitaxy.
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Calculation of unstable mixing region in wurtzite In1-x-yGaxAlyN
TL;DR: In this paper, the wurtzite structure In1−x−yGaxAlyN quaternary system with a wide band gap, which is useful for light emitters in the wavelength region shorter than green, is studied with respect to the unstable region in mixing.