H
Hiroshi Tsutsui
Researcher at Hokkaido University
Publications - 87
Citations - 694
Hiroshi Tsutsui is an academic researcher from Hokkaido University. The author has contributed to research in topics: MIMO-OFDM & Entropy encoding. The author has an hindex of 13, co-authored 86 publications receiving 657 citations. Previous affiliations of Hiroshi Tsutsui include Kyoto University & Osaka University.
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Journal ArticleDOI
Role of Nine Repeating Sequences of the Mini-F Genome for Expression of F-Specific Incompatibility Phenotype and Copy Number Control
TL;DR: The intensity of FIP reflects the dosage of repeats in a cell, and a model to account for the role of the repeating sequences in the control of copy number and FIP is discussed.
Proceedings ArticleDOI
Sequential importance sampling for low-probability and high-dimensional SRAM yield analysis
TL;DR: Elimination of brute-force search and adaptive trial distribution significantly improves the efficiency of failure-rate estimation of hitherto unsolved high-dimensional cases wherein a lot of variation sources including threshold voltages, channel-length, carrier mobility, etc. are simultaneously considered.
Journal ArticleDOI
Replication Control and Switch-Off Function as Observed with a Mini-F Factor Plasmid
TL;DR: It is demonstrated that there is a switch-off mechanism acting on deoxyribonucleic acid synthesis (initiation) in a cell carrying mini-F, and its intensity is related to the plasmid copy number, which supports the "inhibitor dilution model".
Journal ArticleDOI
Identification of the minimal essential region for the replication origin of miniF plasmid
TL;DR: The minimal replication origin of miniF plasmid was found to lie within a region of 217 bp in length, which contains an AT cluster and the four 19 bp direct repeats responsible for incompatibility, termed incB.
Proceedings ArticleDOI
A device array for efficient bias-temperature instability measurements
TL;DR: In this paper, a device array suitable for efficiently collecting statistical information on bias-temperature instability (BTI) parameters of a large number of transistors is presented, which substantially shortens measurement time of threshold voltage shifts under BTI conditions by parallelizing stress periods of multiple devices while maintaining 0.2mV precision.