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Hitoshi Sai

Researcher at National Institute of Advanced Industrial Science and Technology

Publications -  131
Citations -  4098

Hitoshi Sai is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Thin film & Silicon. The author has an hindex of 33, co-authored 119 publications receiving 3671 citations. Previous affiliations of Hitoshi Sai include Tohoku University & Toyota Technological Institute.

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100 nm period silicon antireflection structures fabricated using a porous alumina membrane mask

TL;DR: An ordered anodic porous alumina membrane has been used as a lithographic mask of SF6 fast atom beam etching to generate a 100 nm period antireflection structure on a silicon substrate.
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Light trapping effect of submicron surface textures in crystalline Si solar cells

TL;DR: In this paper, the antireflection and light trapping effects of submicron surface textures in crystalline Si (c-Si) solar cells were quantitatively investigated by numerical simulations based on Maxwell's equations with a simple two-dimensional (2D) surface grating model.
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High-temperature resistive surface grating for spectral control of thermal radiation

TL;DR: In this article, the spectral properties of two-dimensional W gratings were investigated to obtain high-temperature resistive selective emitters, and numerical calculations based on rigorous coupled-wave analysis were performed to determine the structural profile of gratings with good spectral selectivity.
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Thermophotovoltaic generation with selective radiators based on tungsten surface gratings

TL;DR: Two-dimensional surface-relief gratings with a period of 1.0-0.2μm composed of rectangular microcavities were fabricated on single crystalline W substrates to develop spectrally selective radiators for thermophotovoltaic generation.
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Antireflective subwavelength structures on crystalline Si fabricated using directly formed anodic porous alumina masks

TL;DR: In this paper, a simple fabrication technique for subwavelength structured (SWS) surfaces by means of anodic porous alumina masks directly formed on Si substrates was proposed and demonstrated.