Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest1,2 in developing non-volatile memories that use ferroelectric thin films—‘ferroelectric random access memories’, or FRAMs—in which information is stored in the polarization state of the ferroelectric material. To realize a practical FRAM, the thin films should satisfy the following criteria: compatibility with existing dynamic random access memory technologies, large remnant polarization (Pr) and reliable polarization-cycling characteristics. Early work focused on lead zirconate titanate (PZT) but, when films of this material were grown on metal electrodes, they generally suffered from a reduction of Pr (‘fatigue’) with polarity switching. Strontium bismuth tantalate (SBT) and related oxides have been proposed to overcome the fatigue problem3, but such materials have other shortcomings, such as a high deposition temperature. Here we show that lanthanum-substituted bismuth titanate thin films provide a promising alternative for FRAM applications. The films are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650 °C and their values of Pr are larger than those of the SBT films.

Lanthanum-substituted bismuth titanate for use in non-volatile memories

Layer-structured, single phase Bi5Fe0.5Co0.5Ti3O15 ceramics was synthesized following a multicalcination procedure. Magnetic moment increases more than three times by substituting half Fe sites by Co ions. The material exhibits an Aurivillius phase with a four-layer unit cell structure, and presents a remarkable coexistence of ferroelectricity and ferromagnetism above room temperature. The measured 2Pr and 2Mr are 13 μC/cm2 and 7.8 memu/g, respectively. The material’s magnetic behavior below 275 °C is relaxationlike and its magnetic Curie temperature is ∼345 °C.

Multiferroic properties of layer-structured Bi5Fe0.5Co0.5Ti3O15 ceramics

We review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this treatment is mainly on high-κ dielectric, ferroelectric, magnetic, and multiferroic materials. Also, we consider ferrimagnetic oxides in the context of the new, rapidly developing field of negative-index metamaterials. This review is motivated by the recent resurgence of interest in complex oxides owing to their coupling of electrical, magnetic, thermal, mechanical, and optical properties, which make them suitable for a wide variety of applications, including heat, motion, electric, and magnetic sensors; tunable and compact microwave passive components; surface acoustic wave devices; nonlinear optics; and nonvolatile memory, and pave the way for designing multifunctional devices and unique applications in spintronics and negative refraction-index media. For most of the materials treated here, structural and physical propertie...

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

The dielectric property complemented by the mechanical measurement (internal friction) in the doped Bi4Ti3O12 [Bi4−xLaxTi3O12 (x=0.5,0.75,1) and Bi4−y/3Ti3−yNbyO12 (y=0.015,0.03,0.06)] was systematically investigated from room temperature to 350 °C. In the plot of dielectric loss versus temperature for Bi4Ti3O12 (BiT), a relaxation peak was confirmed to be associated with the motion of the oxygen vacancy. It is found that the La doping at site A is in favor of improvement of the fatigue property, in contrast, the Nb doping at site B can mainly enhance the remanent polarization. Appropriate La doping at site A of perovskite-type unit in BiT enhances the chemical stability of oxygen vacancy by improving the height of the potential barrier for hopping and enhances the mobility of domain by the changing of domain structures. While the Nb doping at site B could induce the distortion of oxygen octahedral and reduce the oxygen vacancy concentration by a compensating effect so that it results in an enhancement of...

Doping effect on the dielectric property in bismuth titanate

One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near-edge region can be fitted to a simple expression where the intercept gives the band gap and the fitting exponent identifies the electronic transition as direct or indirect. [See Tauc et al., Physica Status Solidi 15, 627 (1966); naturally, these are usually called “Tauc” plots.] In earlier work, we found that direct band gaps fitted using Tauc's method can be quite accurate, to ∼1% [see Viezbicke et al., Phys. Status Solidi B 252, 1700 (2015)]. Still, slopes of these Tauc plots are less frequently quantified, even though the slopes are directly rooted in key band-structure parameters. In this study, we examine the reproducibility of Tauc plot slopes for ZnO as a model direct-gap material and compare these experimental values with the theoretically derived slope. In contrast to the band gap accuracy, the experimental slope values varied by several orders of magnitude. The histogram of slope values was significantly more compact for Tauc plots exhibiting less Urbach tail contribution. In these cases, the Tauc slopes can provide an order-of-magnitude quantification of other key band characteristics such as carrier effective mass.

Assessing Tauc plot slope quantification: ZnO thin films as a model system

X-ray photoemission spectroscopy measurements were executed to compare the nature of defects in SrBi2Ta2O9 (SBT) and Bi4Ti3O12 (BTO) films. In the SBT film, it was found that the oxygen ions at the metal–oxygen octahedra were much more stable than those at the Bi2O2 layers. On the other hand, for the BTO film, oxygen vacancies could be induced both at the titanium–oxygen octahedra and at the Bi2O2 layers. We suggested that the difference in stability of the metal–oxygen octahedra should be related to different fatigue behaviors of the SBT and the BTO films.

Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12

This study examined the optical and electronic properties of post-annealed Al-doped ZnO (ZnO:Al) thin films. The lowest resistivity was observed after annealing a sputter-deposited ZnO:Al film at 350 °C. X-ray photoelectron spectroscopy revealed a ∼0.4 eV shift in the Fermi level when the carrier concentration was increased to 1.6×1020 cm−3 by Al doping and annealing. The optical band gap increased from 3.2 eV for insulating ZnO to 3.4 eV for conducting ZnO:Al, and was associated with conduction-band filling up to ∼0.4 eV in a renormalized band gap. Schematic band diagrams are shown for the ZnO and ZnO:Al films.

Optical and electronic properties of post-annealed ZnO:Al thin films

The photoluminescence behavior of CdS quantum dots in initial growth stage was studied in connection with an annealing process. Compared to the as-synthesized CdS quantum dots (quantum efficiency ≅ 1%), the heat-treated sample showed enhanced luminescence properties (quantum efficiency ≅ 29%) with a narrow band-edge emission. The simple annealing process diminished the accumulated defect states within the nanoparticles and thereby reduced the nonradiative recombination, which was confirmed by diffraction, absorption, and time-resolved photoluminescence. Consequently, the highly luminescent and defect-free nanoparticles were obtained by a facile and straightforward process.

/pdf/photoluminescence-enhancement-in-cds-quantum-dots-by-thermal-yzzqiwsosg.pdf

Photoluminescence enhancement in CdS quantum dots by thermal annealing

The effects of surface passivation on the photoluminescence (PL) properties of CdS nanoparticles oxidized by straightforward H2O2 injection were examined. Compared to pristine cadmium sulfide nanocrystals (quantum efficiency ≅ 0.1%), the surface-passivated CdS nanoparticles showed significantly enhanced luminescence properties (quantum efficiency ≅ 20%). The surface passivation by H2O2 injection was characterized using X-ray photoelectron spectroscopy, X-ray diffraction, and time-resolved PL. The photoluminescence enhancement is due to the two-order increase in the radiative recombination rate by the sulfate passivation layer.

/pdf/an-effective-oxidation-approach-for-luminescence-enhancement-13y4n8hddo.pdf

Hoechang Kim

Papers

Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12

Optical and electronic properties of post-annealed ZnO:Al thin films

Photoluminescence enhancement in CdS quantum dots by thermal annealing

An effective oxidation approach for luminescence enhancement in CdS quantum dots by H2O2