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Hoichang Yang

Researcher at Inha University

Publications -  144
Citations -  12440

Hoichang Yang is an academic researcher from Inha University. The author has contributed to research in topics: Thin film & Pentacene. The author has an hindex of 45, co-authored 144 publications receiving 11290 citations. Previous affiliations of Hoichang Yang include University of California, Los Angeles & Rensselaer Polytechnic Institute.

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Influence of Branched Alkyl Ester-Labeled Side Chains on Specific Chain Arrangement and Charge-Transport Properties of Diketopyrrolopyrrole-Based Conjugated Polymers.

TL;DR: Structural analysis of the DPPBT-based copolymers demonstrated that the introduction of a proper alkyl ester spacer to the branched alKYl chains can shorten the π-π stacking distance between the D PPBT backbones down to 3.61 Å and promote the development of two-dimensionally extended domains.
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Controlling Conjugation and Solubility of Donor-Acceptor Semiconducting Copolymers for High-Performance Organic Field-Effect Transistors.

TL;DR: As solution-processed semiconducting channel layers in organic field-effect transistors (OFETs), PDDBE and PDTTE copolymers had drastically different ordered structures on polymer-grafted SiO2 dielectrics.
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Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors

TL;DR: In this paper, photo and temperature cured polymer dielectrics were fabricated on a gate-patterned glass, with two immiscible polymer precursors, divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB precursor) and poly(melamine-co-formaldehyde)acrylate (PMFA), which have excellent insulating properties, but show discernible dielectric constants and polarities.
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Charge transport and morphology of pentacene films confined in nano-patterned region

TL;DR: Lee et al. as discussed by the authors analyzed the effect of the morphology of the pentacene films confined in the micro- and nano-scale relief patterns on the charge transport of polycrystalline organic semiconductors.