H
Hong Ha Vuong
Researcher at AT&T
Publications - 1
Citations - 179
Hong Ha Vuong is an academic researcher from AT&T. The author has contributed to research in topics: Charge carrier & Electron mobility. The author has an hindex of 1, co-authored 1 publications receiving 170 citations.
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An improved electron and hole mobility model for general purpose device simulation
TL;DR: In this paper, a physically-based, semi-empirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias.