Journal ArticleDOI
An improved electron and hole mobility model for general purpose device simulation
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In this paper, a physically-based, semi-empirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias.Abstract:
A new, comprehensive, physically-based, semiempirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured MOS I-V characteristics over a wide range of substrate doping, channel length, transverse electric field, substrate bias, and temperature.read more
Citations
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Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
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Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies
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Discrete Dopant Fluctuations in 20-nm/15-nm-Gate Planar CMOS
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References
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Journal ArticleDOI
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
TL;DR: In this paper, the inversion layer mobility in n-and p-channel Si MOSFETs with a wide range of substrate impurity concentrations (10/sup 15/ to 10/sup 18/ cm/sup -3/) was examined.
Journal ArticleDOI
A unified mobility model for device simulation—I. Model equations and concentration dependence
TL;DR: In this article, the authors presented a physics-based analytical model that unifies the descriptions of majority and minority carrier mobility and that includes screening of the impurities by charge carriers, electron-hole scattering, clustering of impurities and the full temperature dependence of both minority and majority carrier mobility.
Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
TL;DR: A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.
Proceedings ArticleDOI
Characterization of the electron mobility in the inverted l100g Si surface
A.G. Sabnis,J.T. Clemens +1 more
TL;DR: In this article, the effective mobility of electrons in the inverted 〈100〉 Si surface was measured over a wide range of temperatures, gate voltages, and back-bias voltages.
Journal ArticleDOI
Relation of drift velocity to low‐field mobility and high‐field saturation velocity
TL;DR: In this paper, a number of interesting results concerning the parameterization of drift-velocity-vs-electric field relations in terms of mobility and saturation velocity are derived concerning the parameters of drift and saturation velocities.