The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

http://science.sciencemag.org/content/sci/311/5758/208.full.pdf

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

From the Publisher:
This work covers all aspects of physical design. The book is a core reference for graduate students and CAD professionals. For students, concept and algorithms are presented in an intuitive manner. For CAD professionals, the material presents a balance of theory and practice. An extensive bibliography is provided which is useful for finding advanced material on a topic. At the end of each chapter, exercises are provided, which range in complexity from simple to research level.

Algorithms for VLSI Physical Design Automation

Recent changes in CMOS device structures and materials motivated by impending atomistic and quantum-mechanical limitations have profoundly influenced the nature of delay and power variability. Variations in process, temperature, power supply, wear-out, and use history continue to strongly influence delay. The manner in which tolerance is specified and accommodated in high-performance design changes dramatically as CMOS technologies scale beyond a 90-nm minimum lithographic linewidth. In this paper, predominant contributors to variability in new CMOS devices are surveyed, and preferred approaches to mitigate their sources of variability are proposed. Process-, device-, and circuit-level responses to systematic and random components of tolerance are considered. Exploratory, novel structures emerging as evolutionary CMOS replacements are likely to change the nature of variability in the coming generations.

High-performance CMOS variability in the 65-nm regime and beyond

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Methods and devices for fabricating and assembling printable semiconductor elements

This paper describes a new design methodology to analyzethe on-chip power supply noise for high-performance microprocessors.Based on an integrated package-level andchip-level power bus model, and a simulated switching circuitmodel for each functional block, this methodology offersthe most complete and accurate analysis of Vdd distributionfor the entire chip. The analysis results not only providedesigners with the inductive ΔI noise and the resistive IRdrop data at the same time, but also allow designers to easilyidentify the hot spots on the chip and ΔV across the chip.Global and local optimization such as buffer sizing, powerbus sizing, and on-chip decoupling capacitor placement canthen be conducted to maximize the circuit performance andminimize the noise.

/pdf/power-supply-noise-analysis-methodology-for-deep-submicron-4ynt8clso1.pdf

Power supply noise analysis methodology for deep-submicron VLSI chip design

An apparatus for providing two-phase heat transfer for semiconductor devices includes a vapor chamber configured to carry a cooling liquid, the vapor chamber having base section, and a plurality of three-dimensional (3D) shaped members. The plurality of 3D-shaped members have interior and exterior sidewalls, the 3D-shaped members being connected to the base section so that vapor carrying latent heat can reach the respective interior sidewalls and get transferred to the respective exterior sidewalls configured to be in contact with an external coolant. The vapor chamber is configured to be in contact with a semiconductor device in order to remove heat therefrom.

Apparatuses for Dissipating Heat from Semiconductor Devices

A cooling system for a semiconductor substrate incudes a plurality of trenches formed from a backside of the semiconductor substrate, and thermally conductive material deposited in the plurality of trenches. A method of forming cooling elements in a semiconductor substrate, includes coating a backside of the semiconductor substrate with a first mask layer, forming a plurality of trench patterns in the first mask layer, etching the semiconductor substrate to form a plurality of trenches along the plurality of trench patterns, and depositing thermally conductive material in the plurality of trenches. Trenches constructed from the backside of a wafer improve efficiency of heat transfer from a front-side to the backside of an integrated-circuit chip. The fabrication of trenches from the backside of the wafer allows for increases in the depth and number of trenches, and provides a means to attach passive and active cooling devices directly to the backside of a wafer.

Cooling system for a semiconductor device and method of fabricating same

A semiconductor device includes a combination substrate having a bulk silicon region, and a silicon-on-insulator (SOI) region. The SOI region includes a crystallized silicon layer formed by annealing amorphous silicon and having isolation trenches formed therein so as to remove defective regions, and isolation oxides formed in the isolation trenches.

Semiconductor device on a combination bulk silicon and silicon-on-insulator (SOI) substrate

A semiconductor device and a method of fabricating a semiconductor device, wherein the method comprises forming, on a substrate, a plurality of planarized fin bodies to be used for customized fin field effect transistor (FinFET) device formation; forming a nitride spacer around each of the plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film. The fabricated semiconductor device is used in customized applications as a customized semiconductor device.

Howard H. Chen

Papers

Power supply noise analysis methodology for deep-submicron VLSI chip design

Apparatuses for Dissipating Heat from Semiconductor Devices

Cooling system for a semiconductor device and method of fabricating same

Semiconductor device on a combination bulk silicon and silicon-on-insulator (SOI) substrate

Sea-of-fins structure on a semiconductor substrate and method of fabrication