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Hsiang Lin Liu

Researcher at National Taiwan Normal University

Publications -  35
Citations -  1493

Hsiang Lin Liu is an academic researcher from National Taiwan Normal University. The author has contributed to research in topics: Superconductivity & Scattering. The author has an hindex of 17, co-authored 35 publications receiving 1452 citations. Previous affiliations of Hsiang Lin Liu include University of Florida & University of Illinois at Urbana–Champaign.

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Catalytic growth and characterization of gallium nitride nanowires.

TL;DR: Temperature dependence of photoluminescence spectra of the nanowires revealed that the emission mainly comes from wurtzite GaN with little contribution from the cubic phase, which suggests potential of the GaN Nanowires in field emission applications.
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Infrared and Raman-scattering studies in single-crystalline GaN nanowires

TL;DR: In this paper, the spectral properties of high-purity and high-quality GaN nanowires have been investigated in terms of the peak shift and the broadening of the four first-order Raman modes.
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Raman and optical spectroscopic studies of small-to-large polaron crossover in the perovskite manganese oxides

TL;DR: In this article, an optical reflectance and Raman-scattering study of the metal-semiconductor transition in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low temperature ferromagnetic phase is presented.
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Nonlinear bio-photonic crystal effects revealed with multimodal nonlinear microscopy.

TL;DR: With no energy release during harmonic generation processes, the nonlinear‐photonic‐crystal‐like SHG activity is useful for investigating the dynamics of structure–function relationships at subcellular levels and is ideal for studying living cells, as minimal or no preparation is required.
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Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source

TL;DR: In this paper, the growth of zinc blende−GaN epitaxial films on β-SiC coated (001) Si substrates using a molecular beam epitaxy approach in which the reactive nitrogen species are generated in a remote 13.56 MHz rf plasma discharge, nitrogen free-radical source.