I
I. Balberg
Researcher at Hebrew University of Jerusalem
Publications - 6
Citations - 219
I. Balberg is an academic researcher from Hebrew University of Jerusalem. The author has contributed to research in topics: Scanning tunneling spectroscopy & Quantum dot. The author has an hindex of 5, co-authored 6 publications receiving 205 citations.
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Journal ArticleDOI
Doping and quantum confinement effects in single Si nanocrystals observed by scanning tunneling spectroscopy.
Omri Wolf,Mita Dasog,Zhenyu Yang,I. Balberg,Jonathan G. C. Veinot,Jonathan G. C. Veinot,Oded Millo +6 more
TL;DR: The tunneling spectra measured on NCs functionalized with NH4Br or allylamine show band-edge shifts toward higher energies, akin to p-type doping, which is consistent with the blueshift revealed by photoluminescence from dodecene functionalized Si-NCs.
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Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se2
Sascha Sadewasser,Daniel Abou-Ras,Doron Azulay,Robert Baier,I. Balberg,David Cahen,Sidney R. Cohen,Konstantin Gartsman,Kumaravelu Ganesan,Jaison Kavalakkatt,Wenjie Li,Oded Millo,T. Rissom,Yossi Rosenwaks,H.-W. Schock,A. Schwarzman,Thomas Unold +16 more
TL;DR: In this paper, a microscopic approach to characterizing grain boundaries (GBs) in polycrystalline CuIn1−xGaxSe2 films with x = 0.033 was presented.
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Direct Evaluation of the Quantum Confinement Effect in Single Isolated Ge Nanocrystals.
Oded Millo,I. Balberg,Doron Azulay,Tapas K. Purkait,Anindya K. Swarnakar,Eric Rivard,Jonathan G. C. Veinot,Jonathan G. C. Veinot +7 more
TL;DR: To address the yet open question regarding the nature of quantum confinement in Ge nanocrystals (Ge NCs), scanning tunneling spectroscopy was employed to monitor the electronic structure of individual isolated Ge NCs as a function of their size.
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Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals
Arzu Angı,Regina Sinelnikov,Al Meldrum,Jonathan G. C. Veinot,I. Balberg,Doron Azulay,Oded Millo,Bernhard Rieger +7 more
TL;DR: Optoelectronic properties of Si nanocrystals were studied by combining scanning tunneling spectroscopy (STS) and optical measurements, and an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.