Diffraction characteristics of general dielectric planar (slab) gratings and surface-relief (corrugated) gratings are reviewed. Applications to laser-beam deflection, guidance, modulation, coupling, filtering, wavefront reconstruction, and distributed feedback in the fields of acoustooptics, integrated optics, holography, and spectral analysis are discussed. An exact formulation of the grating diffraction problem without approximations (rigorous coupled-wave theory developed by the authors) is presented. The method of solution is in terms of state variables and this is presented in detail. Then, using a series of fundamental assumptions, this rigorous theory is shown to reduce to the various existing approximate theories in the appropriate limits. The effects of these fundamental assumptions in the approximate theories are quantified and discussed.

Analysis and applications of optical diffraction by gratings

Integrated optics and new wave phenomena in optical waveguides

This paper deals with the theory and device applications of periodic thin-film waveguides. Topics treated include mode solutions, optical filters, distributed feedback lasers (DFB), distributed Bragg reflector (DBR) lasers, grating couplers, and phase matching in nonlinear interactions.

/pdf/periodic-structures-for-integrated-optics-inegvy8lro.pdf

Periodic structures for integrated optics

In this paper, studies of the molecular beam epitaxy (MBE) of GaAs‐Ga1−xAlxAs multilayer structures over preferentially etched channels on GaAs substrates are described. It is found that the growth characteristics with MBE are entirely different from those obtained from similar experiments when LPE is used. Results obtained indicate that this etch‐and‐fill technique using MBE as the growth process should be particularly useful in fabricating injection lasers, laser arrays, and integrated optics components which require planar definition.

Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition

Distributed‐feedback GaAs‐GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm2 at 170 K and 3.5 kA/cm2 at 300 K.

/pdf/cw-operation-of-distributed-feedback-gaas-gaalas-diode-3q81im1n1d.pdf

cw operation of distributed‐feedback GaAs‐GaAlAs diode lasers at temperatures up to 300 K

Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid-phase epitaxy. For gratings with a period of 3700 A, the diodes lased at 8770 A, which corresponds to the high-absorption side of the spontaneous emission spectrum. Thresholds as low as 6 kA/cm^2 have been realized.

/pdf/room-temperature-operation-of-gaas-bragg-mirror-lasers-3554bb3b21.pdf

Room-temperature operation of GaAs Bragg-mirror lasers

Selective multilayer epitaxial growth of GaAs-Ga1–xAlxAs through stripe openings in Al2O3 mask is reported. The technique results in prismatic layers of GaAs and Ga1–xAlxAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The crystal habit (shape) has features which are favorable for fabrication of cw injection lasers, laser arrays, and integrated optics components which require planar definition.

/pdf/embedded-heterostructure-epitaxy-a-technique-for-two-x96kabepgk.pdf

Embedded heterostructure epitaxy: A technique for two‐dimensional thin‐film definition

GaAs distributed Bragg reflector lasers

Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.

/pdf/low-threshold-room-temperature-embedded-heterostructure-2x90rr442f.pdf

Low‐threshold room‐temperature embedded heterostructure lasers

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm^2) room-temperature threshold currents.

/pdf/barrier-controlled-low-threshold-pnpn-gaas-heterostructure-1pvq7rzlpy.pdf

I. Samid

Papers

Room-temperature operation of GaAs Bragg-mirror lasers

Embedded heterostructure epitaxy: A technique for two‐dimensional thin‐film definition

GaAs distributed Bragg reflector lasers

Low‐threshold room‐temperature embedded heterostructure lasers

Barrier‐controlled low‐threshold pnpn GaAs heterostructure laser