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Iftikhar Ahmad
Researcher at University of Malakand
Publications - 643
Citations - 10035
Iftikhar Ahmad is an academic researcher from University of Malakand. The author has contributed to research in topics: Band gap & Density functional theory. The author has an hindex of 41, co-authored 515 publications receiving 7236 citations. Previous affiliations of Iftikhar Ahmad include Abbottabad University of Science and Technology & Hazara University.
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Elastic constants of cubic crystals
TL;DR: The cubic-elastic as discussed by the authors is an open source software for the calculation of elastic constants (ECs) of cubic crystals, which can predict reliable results by using single deformation.
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First principle study of the structural and optoelectronic properties of cubic perovskites CsPbM3 (M=Cl, Br, I)
Ghulam Murtaza,Iftikhar Ahmad +1 more
TL;DR: In this article, the highly accurate all electrons full potential linearized augmented plane wave method is used to calculate structural, electronic, and optical properties of cubic perovskites CsPbM3 (M=Cl, Br, I).
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Structural, electronic and optical properties of CsPbX3 (X=Cl, Br, I) for energy storage and hybrid solar cell applications
Murad Ahmad,Gul Rehman,Liaqat Ali,Muhammad Shafiq,Muhammad Shafiq,Rashid Iqbal,Rashid Ahmad,Tahirzeb Khan,S. Jalali-Asadabadi,Muhammad Maqbool,Iftikhar Ahmad,Iftikhar Ahmad +11 more
TL;DR: In this paper, the potential ability and use of perovskites as solar cells and energy storage materials were investigated using density function theory, generalized gradient approximation and modified Becke-Johnson (TB-mBJ) exchange potential.
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Seed Priming with Ascorbic Acid Improves Drought Resistance of Wheat
TL;DR: In this article, the role of seed priming with ascorbic acid (AsA) in drought resistance of wheat was evaluated, consisting of two independent experiments, and it was shown that osmopriming with AsA significantly improved the leaf emergence and elongation, leaf area, specific leaf area and root length and seedling dry weight.
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Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications
TL;DR: In this article, a theoretical study of Al1−xGaxN, based on the fullpotential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties, and nonlinear behavior of the compound with the change in the Ga concentration.