M
Muhammad Maqbool
Researcher at University of Alabama at Birmingham
Publications - 170
Citations - 3926
Muhammad Maqbool is an academic researcher from University of Alabama at Birmingham. The author has contributed to research in topics: Band gap & Thin film. The author has an hindex of 26, co-authored 152 publications receiving 2260 citations. Previous affiliations of Muhammad Maqbool include Ohio University & Qatar University.
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Photocatalytic degradation of dyes using semiconductor photocatalysts to clean industrial water pollution
TL;DR: In this article, the effects of operating parameters on the photocatalytic degradation of textile dyes using various photatalysts have been examined, and the results of the study will help determine the most effective and economical options for removal of dyes in industrial wastewater.
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Structural, electronic and optical properties of CsPbX3 (X=Cl, Br, I) for energy storage and hybrid solar cell applications
Murad Ahmad,Gul Rehman,Liaqat Ali,Muhammad Shafiq,Muhammad Shafiq,Rashid Iqbal,Rashid Ahmad,Tahirzeb Khan,S. Jalali-Asadabadi,Muhammad Maqbool,Iftikhar Ahmad,Iftikhar Ahmad +11 more
TL;DR: In this paper, the potential ability and use of perovskites as solar cells and energy storage materials were investigated using density function theory, generalized gradient approximation and modified Becke-Johnson (TB-mBJ) exchange potential.
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Surface Plasmonic-Assisted Photocatalysis and Optoelectronic Devices with Noble Metal Nanocrystals: Design, Synthesis, and Applications
Amir Zada,Amir Zada,Pir Muhammad,Waqas Ahmad,Zahid Hussain,Sharafat Ali,Maaz Khan,Qasim Khan,Muhammad Maqbool +8 more
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Ab initio study of the bandgap engineering of Al1−xGaxN for optoelectronic applications
TL;DR: In this article, a theoretical study of Al1−xGaxN, based on the fullpotential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties, and nonlinear behavior of the compound with the change in the Ga concentration.
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Ab-initio study of the bandgap engineering of Al(1-x)Ga(x)N for optoelectronic applications
TL;DR: In this article, a theoretical study of Al(1-x)Ga(x)N, based on fullpotential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga concentration.