Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

The rise of graphene

There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

This paper reviews recent experimental and theoretical progress concerning many-body phenomena in dilute, ultracold gases. It focuses on effects beyond standard weak-coupling descriptions, such as the Mott-Hubbard transition in optical lattices, strongly interacting gases in one and two dimensions, or lowest-Landau-level physics in quasi-two-dimensional gases in fast rotation. Strong correlations in fermionic gases are discussed in optical lattices or near-Feshbach resonances in the BCS-BEC crossover.

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Many-Body Physics with Ultracold Gases

Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

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Raman spectroscopy as a versatile tool for studying the properties of graphene

Metal–insulator transition in a weakly interacting many-electron system with localized single-particle states

We present a comprehensive theoretical treatment of the effect of electron-phonon interactions on molecular transistors, including both quantal and classical limits. We study both equilibrated and out of equilibrium phonons. We present detailed results for conductance, noise and phonon distribution in two regimes. One involves temperatures large as compared to the rate of electronic transitions on and off the dot; in this limit our approach yields classical rate equations, which are solved numerically for a wide range of parameters. The other regime is that of low temperatures and weak electron-phonon coupling where a perturbative approximation in the Keldysh formulation can be applied. The interplay between the phonon-induced renormalization of the density of states on the quantum dot and the phonon-induced renormalization of the dot-lead coupling is found to be important. Whether or not the phonons are able to equilibrate in a time rapid compared to the transit time of an electron through the dot is found to affect the conductance. Observable signatures of phonon equilibration are presented. We also discuss the nature of the low-T to high-T crossover.

Phonon effects in molecular transistors: Quantal and classical treatment

Quantum effects in Coulomb blockade

temperatures T τ > 1. We show that in this (ballistic) regime the temperature dependence of conductivity is still governed by the same physical processes as the Altshuler-Aronov corrections - electron scattering by Friedel oscillations. However, in this regime the correction is linear in temperature; the value and even the sign of the slope depends on the strength of electron-electron interaction. (This sign change may be relevant for the “metal-insulator” transition observed recently.) We show that the slope is directly related to the renormalization of the spin susceptibility and grows as the system approaches the ferromagnetic Stoner instability. Also, we obtain the temperature dependence of the conductivity in the cross-over region between the diffusive and ballistic regimes. Finally, we derive the quantum kinetic equation, which describes electron transport for arbitrary value of T τ.

https://arxiv.org/pdf/cond-mat/0105406.pdf

Igor L. Aleiner

Papers

Metal–insulator transition in a weakly interacting many-electron system with localized single-particle states

Phonon effects in molecular transistors: Quantal and classical treatment

Quantum effects in Coulomb blockade

Interaction corrections at intermediate temperatures: Longitudinal conductivity and kinetic equation

Phonon effects in molecular transistors: Quantum and classical treatment