Irina V. Sedova

TL;DR: In this article, single fractional monolayer (FM) CdSe/ZnSe structures have been grown by molecular beam epitaxy (MBE), employing both conventional MBE and migration-enhanced epitaxes (MEE).

TL;DR: In this paper, the authors present a phenomenological thermodynamic model of MBE growth of II−VI compounds and alloys, which allows accurate control of their growth rate, composition, surface stoichiometry, and phase separation in wide temperature range.

TL;DR: The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers.

TL;DR: In this article, the authors demonstrate that the selection of a limited number of single excitonic lines from a dense array of epitaxial quantum dots (QDs) can be realized spectrally via resonant energy transfer from a huge number of small QDs toward a limited set of large nano-islands through their excited levels.

TL;DR: In this article, an excitonic state localized at the 1D intersection of planar stacking faults with a high quality ZnSe quantum well was observed in a specimen used for preceding transmission electron microscopy studies.