J
J. A. Davies
Researcher at Chalk River Laboratories
Publications - 9
Citations - 866
J. A. Davies is an academic researcher from Chalk River Laboratories. The author has contributed to research in topics: Silicon & Ion implantation. The author has an hindex of 8, co-authored 9 publications receiving 860 citations.
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Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
TL;DR: In this paper, the orientation dependence of the backscattered yield of 1.0-MeV helium ions has been used to investigate the lattice characteristics of silicon and germanium implanted at room temperature with 40-...
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Ion implantation of silicon. I. Atom location and lattice disorder by means of 1.0-MeV helium ion scattering
TL;DR: In this paper, the orientation dependence of the backscattering yield of a 1.0-MeV helium beam was investigated by studying the implantation behavior of Sb in silicon.
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Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
TL;DR: The implantation and annealing behavior of several Group III (Ga, In, Tl) and Group V (As, Sb, Bi) dopants in silicon has been investigated by studying the orientation dependence of the scattering yield of a 1.0-MeV He+ beam.
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Channeling Studies in Diamond-Type Lattices
TL;DR: In this paper, the channeling characteristics of protons and helium ions in various diamond-type lattices (diamond, Si, Ge, GaP, GaAs, and GaSb) have been studied by means of Rutherford backscattering in the 0.5-2-MeV range.
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Channeling of MeV He + Ions in Tungsten and Other Crystals: An Intercomparison of Rutherford Scattering and of Characteristic L and M X-Ray Yields
TL;DR: In this article, a comparison between wide-angle scattering and x-ray yield curves is reported for tungsten single crystals with respect to an incident beam of 1.4-MeV helium ions.