J
J. Brad Boos
Researcher at United States Naval Research Laboratory
Publications - 55
Citations - 1135
J. Brad Boos is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Electron mobility & Field-effect transistor. The author has an hindex of 18, co-authored 55 publications receiving 1078 citations.
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Antimonide-based compound semiconductors for electronic devices: A review
TL;DR: In this article, the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors(HBTs) is reviewed.
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Mobility enhancement in strained p-InGaSb quantum wells
TL;DR: In this paper, the InGaSb was grown by molecular beam epitaxy, resulting in a splitting of the heavy and light-hole valence bands and an enhancement of the mobility.
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Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors
TL;DR: In this article, quantum wells of GaSb were grown by molecular beam epitaxy on GaAs substrates and the buffer layer and barrier layers consisted of relaxed AlAs x Sb 1−x.
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Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning
Aneesh Nainani,Yun Sun,Toshifumi Irisawa,Ze Yuan,Masaharu Kobayashi,Piero Pianetta,Brian R. Bennett,J. Brad Boos,Krishna C. Saraswat +8 more
TL;DR: In this article, the surface cleaning of Sb-based compound semiconductors using HF, NH4OH, and HCl cleans and the metaloxide-semiconductor (MOS) capacitors fabricated subsequently were investigated using low-energy radiation from the synchrotron.
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Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
Laura B. Ruppalt,Erin R. Cleveland,James G. Champlain,Sharka M. Prokes,J. Brad Boos,Doewon Park,Brian R. Bennett +6 more
TL;DR: In this paper, the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces was studied, with varying plasma powers, exposure times, and substrate temperatures.