Showing papers by "J. Carstensen published in 2006"
TL;DR: Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the "nanometer" regime.
Abstract: Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the "nanometer" regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more "exotic" uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching), properties of porous semiconductors, and emerging applications.
77 citations
TL;DR: In this article, a host of new and not yet totally understood phenomena was discovered, including pores of various kinds and crystallography, and they finally succeeded in producing deep pores in n-type but also in p-type Ge of various doping levels and crystal orientations.
9 citations
27 Apr 2006
4 citations
TL;DR: In this paper, the current-burst model is used for self-organized structure formation in semiconductors, where all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); the properties and interactions between CB's are described by a number of material and chemistry dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies.
Abstract: Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); the properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies. These morphologies cannot be influenced only by the current, by chemical, material and other etching conditions, but also by an open-loop control, triggering the time scale given by the oxide dissolution time. With this method, under conditions where only branching pores occur, the additional signal hinders side pore formation resulting in regular pores with modulated diameter.
2 citations