https://iopscience.iop.org/article/10.1143/JJAP.18.2329/pdf

GaInAsP/InP surface emitting injection lasers.

Integrated optics and new wave phenomena in optical waveguides

Ion implantation for isolation of III-V semiconductors

1. Introduction: Building a City of Light 2. Guiding Light and Luminous Fountains (1841-1890) 3. Fibers of Glass 4. The Quest for Remote Viewing: Television and the Legacy of Sword Swallowers (1895-1940) 5. A Critical Insight: The Birth of the Clad Optical Fiber (1950-1955) 6. 99 Percent Perspiration: The Birth of an Industry (1954-1960) 7. A Vision of the Future: Communicating with Light (1880-1960) 8. The Laser Stimulates the Emission of New Ideas (1960-1969) 9. "The Only Thing Left Is Optical Fibers" (1960-1969) 10. Trying to Sell a Dream (1965-1970) 11. Breakthrough: The Clearest Glass in the World (1966-1972) 12. Recipes for Grains of Salt: The Semiconductor Laser (1962-1977) 13. A Demonstration for the Queen (1970-1975) 14. Three Generations in Five Years (1975-1983) 15. Submarine Cables: Covering the Ocean Floor with Glass (1970-1995) 16. The Last Mile: An Elusive Vision 17. Reflections on the City of Light Appendix A. Dramatis Personae: Cast of Characters Appendix B. A Fiber-Optic Chronology

City of Light: The Story of Fiber Optics

A comparison was made of the photoluminescent (PL) intensities of n‐type InP and GaAs at room temperature. The PL intensity for InP was over 100 times greater than for comparably doped GaAs. The effect of surface recombination velocity S on the PL intensity was evaluated numerically. When this evaluation is applied to the PL intensity ratios of n‐type InP and GaAs it shows that S for n‐type InP is sufficiently small to eliminate significant influence of nonradiative surface recombination on the observed PL intensity.

Evidence for low surface recombination velocity on n‐type InP

Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.

J. J. Hsieh

Papers

Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m

I-6 Ga x In 1-x As y P 1-y -InP heterostructure lasers