Showing papers by "J.-M. Liu published in 2007"
TL;DR: In this article, the polarization fatigue behavior of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated.
Abstract: The polarization fatigue behavior of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated. The fatigue endurance is significantly enhanced upon Ba doping and almost fatigue-free performance up to 1010 switching cycles for PBZT (x=0.1) thin films are observed at room temperature. It is revealed that Ba doping up to x=0.1 results in a 70% decrease of oxygen vacancies in the films. The improved fatigue endurance is attributed to the enhanced oxygen ion stability and suppressed oxygen vacancies.
22 citations
TL;DR: In this article, the defect chemistry as one of the origins of the switching fatigue is demonstrated by the predominant interfacial effect and bulk effect resulting in two types of markedly opposite fatigue responses.
Abstract: The polarization fatigue behaviors of Pt/LaNiO3/Pb(Zr0.52Ti0.48)O-3/LaNiO3/Pt (Pt/LNO/PZT/LNO/Pt) and Pt/PZT/Pt structures under different temperatures T, voltages V-amp, and frequencies f are investigated in order to clarify defect-related interfacial and bulk effects. The fatigue endurance of the Pt/LNO/PZT/LNO/Pt structure is enhanced at higher T, larger V-amp, and lower f, whereas for the Pt/PZT/Pt structure a better antifatigue performance is obtained at lower T, smaller V-amp, and higher f. The defect chemistry as one of the origins of the switching fatigue is demonstrated by the predominant interfacial effect and bulk effect resulting in two types of markedly opposite fatigue responses. (c) 2007 American Institute of Physics.
12 citations
TL;DR: In this paper, the ferroelectric and polarization fatigue characteristics of Pb1-xCax(Zr0.52Ti0.48)O3 (PCZT) thin films prepared using the sol-gel method were studied.
Abstract: The ferroelectric and polarization fatigue characteristics of Pb1-xCax(Zr0.52Ti0.48)O3 (PCZT) thin films prepared using the sol–gel method were studied. The Ca-doping slightly suppresses the ferroelectricity of Pb(Zr0.52Ti0.48)O3 (PZT) because of the quantum paraelectric behavior of CaTiO3. Compared with PZT thin films, the PCZT (x=0.2) thin films show enhanced fatigue resistance at room temperature, further emphasized by the almost fatigue-free behavior at 100 K. The temperature-dependent dc-conductivity suggests a decrease of the oxygen vacancy density by almost 20 times and a slightly declined activation energy U for oxygen vacancies, upon increasing of the Ca-doping content from 0.0 to 0.2. It is argued that the improved fatigue endurance is ascribed to the decreasing density of oxygen vacancies due to the Ca-doping, although the lowered activation energy of oxygen vacancies is unfavorable.
11 citations
TL;DR: In this paper, the authors studied the chemical stability of multiferroic BiFeO 3 (BFO) ceramics through electrochemical hydrogen charging, in which BFO ceramic pellets were placed in 0.01 M NaOH solution with hydrogen deposited on their electrodes from the electrolysis of water.
8 citations
Journal Article•
TL;DR: In this article, the polarization fatigue behavior of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated.
Abstract: The polarization fatigue behavior of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated. The fatigue endurance is significantly enhanced upon Ba doping and almost fatigue-free performance up to 1010 switching cycles for PBZT (x=0.1) thin films are observed at room temperature. It is revealed that Ba doping up to x=0.1 results in a 70% decrease of oxygen vacancies in the films. The improved fatigue endurance is attributed to the enhanced oxygen ion stability and suppressed oxygen vacancies.
3 citations