J
J. Monecke
Researcher at Freiberg University of Mining and Technology
Publications - 61
Citations - 683
J. Monecke is an academic researcher from Freiberg University of Mining and Technology. The author has contributed to research in topics: Raman spectroscopy & Hubbard model. The author has an hindex of 12, co-authored 61 publications receiving 667 citations. Previous affiliations of J. Monecke include Dresden University of Technology.
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Acoustic vibrations of semiconductor nanocrystals in doped glasses
TL;DR: In this article, a theoretical treatment of the relationship between the particle size, the frequencies, and the widths of various phonons, taking into account the matrix influence on the vibrational spectrum and on its damping, is presented.
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Fröhlich modes in GaN columnar nanostructures
TL;DR: In this paper, a Raman line-shape analysis based on the effective dielectric function of a composite was presented to bring to light the Fr\"ohlich character of this mode.
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Fröhlich modes in porous III-V semiconductors
TL;DR: In this article, the frequency-dependent optical properties in the infrared region were calculated using a dielectric function derived on the basis of an appropriate two-dimensional effective medium theory and the theoretical reflectance spectra were found to be in good agreement with the experimental ones and the predicted coupled Frohlich-plasmon modes for conducting samples were observed experimentally.
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Micro-raman-scattering study of surface-related phonon modes in porous gap
TL;DR: In this paper, a Raman line-shape analysis based on the light scattering due to the electro-optic and deformation potential mechanisms was presented, and the frequency of the surface-related vibrational mode was found to decrease from 398 to 394.3
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Porosity-induced modification of the phonon spectrum of n-GaAs
TL;DR: In this paper, a new Raman scattering peak at, located between the bulk TO and LO frequencies, has been observed in porous layers and attributed to a surface-related phonon, which is either the depletion of the GaAs skeleton due to the surface space charge effect or the decoupling of the LO-phonon and the plasmon modes at the relative large wavevectors transferred in nanostructures.