J. P. Kakko

TL;DR: Results of Brillouin—Mandelstam light scattering spectroscopy reveal multiple (up to ten) confined acoustic phonon polarization branches in GaAs nanowires with a diameter as large as 128 nm, at a length scale that exceeds the grey phonon mean-free path in this material by almost an order-of-magnitude.

TL;DR: In this article, the authors demonstrate efficient surface passivation of GaAs nanowires using ultrathin in-situ grown epitaxial InP and GaP capping layers, with metallo-organic vapor phase epitaxy as the growth system.

TL;DR: In this paper, low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown ALD.

TL;DR: It is suggested that a low Al composition in the shell is desirable in order to achieve ideal passivation in GaAs nanowires and the carrier confinement at the interface is most likely related to Al inhomogeneity and/or Al-induced traps.

TL;DR: This technique provides a new way to study individual nano-objects in three dimensions through the unique combination of nonlinear microscopy and CVBs.