J
J. Protzman
Researcher at IBM
Publications - 2
Citations - 13
J. Protzman is an academic researcher from IBM. The author has contributed to research in topics: Low-k dielectric. The author has an hindex of 1, co-authored 2 publications receiving 13 citations.
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Journal ArticleDOI
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
Fuminori Ito,Hosadurga Shobha,Masayoshi Tagami,Takeshi Nogami,Stephan A. Cohen,Y. Ostrovski,Steven E. Molis,K. Maloney,J. Femiak,J. Protzman,T. Pinto,Errol Todd Ryan,Anita Madan,Chenming Hu,Terry A. Spooner +14 more
TL;DR: In this article, the effects of surface treatment before the cap dielectric deposition on low-k surface damage and Cu surface cleaning were systematically investigated, and the results showed that the optimized NH"3 plasma condition such as high RF power and high pressure exhibited the high efficiency for oxygen removal from the Cu surface without increasing the k-value of low k film.
Proceedings ArticleDOI
Robust low-k film with sub-nm pores and high carbon content for highly reliable Cu/low-k BEOL modules
Naoya Inoue,Masayoshi Tagami,Fuminori Ito,Hironori Yamamoto,J. Kawahara,E. Soda,Hosadurga Shobha,Stephen M. Gates,Stephan A. Cohen,Eric G. Liniger,Anita Madan,J. Protzman,Errol Todd Ryan,Vivian W. Ryan,Makoto Ueki,Yoshihiro Hayashi,Terry A. Spooner +16 more
TL;DR: In this paper, a robust low-k film with high carbon content, low porosity with small pores, and high adhesion strength with less adhesion layer was designed for the SiOCH with k∼2.5.