We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

This Review is focused on ion-transport mechanisms and fundamental properties of solid-state electrolytes to be used in electrochemical energy-storage systems. Properties of the migrating species significantly affecting diffusion, including the valency and ionic radius, are discussed. The natures of the ligand and metal composing the skeleton of the host framework are analyzed and shown to have large impacts on the performance of solid-state electrolytes. A comprehensive identification of the candidate migrating species and structures is carried out. Not only the bulk properties of the conductors are explored, but the concept of tuning the conductivity through interfacial effects—specifically controlling grain boundaries and strain at the interfaces—is introduced. High-frequency dielectric constants and frequencies of low-energy optical phonons are shown as examples of properties that correlate with activation energy across many classes of ionic conductors. Experimental studies and theoretical results are...

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Inorganic Solid-State Electrolytes for Lithium Batteries: Mechanisms and Properties Governing Ion Conduction

Advances in wireless technologies, low-power electronics, the internet of things, and in the domain of connected health are driving innovations in wearable medical devices at a tremendous pace. Wearable sensor systems composed of flexible and stretchable materials have the potential to better interface to the human skin, whereas silicon-based electronics are extremely efficient in sensor data processing and transmission. Therefore, flexible and stretchable sensors combined with low-power silicon-based electronics are a viable and efficient approach for medical monitoring. Flexible medical devices designed for monitoring human vital signs, such as body temperature, heart rate, respiration rate, blood pressure, pulse oxygenation, and blood glucose have applications in both fitness monitoring and medical diagnostics. As a review of the latest development in flexible and wearable human vitals sensors, the essential components required for vitals sensors are outlined and discussed here, including the reported sensor systems, sensing mechanisms, sensor fabrication, power, and data processing requirements.

Monitoring of Vital Signs with Flexible and Wearable Medical Devices

With the prospect of extremely fast manufacture of very low cost devices, organic electronics prepared by thin film processing techniques that are compatible with roll-to-roll (R2R) methods are presently receiving an increasing interest. Several technologies using organic thin films are at the point, where transfer from the laboratory to a more production-oriented environment is within reach. In this review, we aim at giving an overview of some of the R2R-compatible techniques that can be used in such a transfer, as well the current status of R2R application within some of the existing research fields such as organic photovoltaics, organic thin film transistors, light-emitting diodes, polymer electrolyte membrane fuel cells, and electrochromic devices. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012

https://onlinelibrary.wiley.com/doi/pdf/10.1002/polb.23192

Roll‐to‐Roll fabrication of large area functional organic materials

Ever-increasing fossil-fuel combustion along with massive CO2 emissions has aroused a global energy crisis and climate change. Photocatalytic CO2 reduction represents a promising strategy for clean, cost-effective, and environmentally friendly conversion of CO2 into hydrocarbon fuels by utilizing solar energy. This strategy combines the reductive half-reaction of CO2 conversion with an oxidative half reaction, e.g., H2 O oxidation, to create a carbon-neutral cycle, presenting a viable solution to global energy and environmental problems. There are three pivotal processes in photocatalytic CO2 conversion: (i) solar-light absorption, (ii) charge separation/migration, and (iii) catalytic CO2 reduction and H2 O oxidation. While significant progress is made in optimizing the first two processes, much less research is conducted toward enhancing the efficiency of the third step, which requires the presence of cocatalysts. In general, cocatalysts play four important roles: (i) boosting charge separation/transfer, (ii) improving the activity and selectivity of CO2 reduction, (iii) enhancing the stability of photocatalysts, and (iv) suppressing side or back reactions. Herein, for the first time, all the developed CO2 -reduction cocatalysts for semiconductor-based photocatalytic CO2 conversion are summarized, and their functions and mechanisms are discussed. Finally, perspectives in this emerging area are provided.

Cocatalysts in Semiconductor-based Photocatalytic CO2 Reduction: Achievements, Challenges, and Opportunities.

The field of organic electrochromics is reviewed here, with particular focus on how the “electrochromic” as a functional material can be brought from the current level of accurate laboratory synthesis and characterization to the device and application level through a number of suited roll-to-roll methods compatible with upscaling and manufacture The successful approaches to operational devices are presented in detail, as well as areas where future research would have a high impact and accelerate the development such as highly conducting and transparent substrates, electrolytes adapted for multilayer application and morphologically stable conjugated polymers

Development and Manufacture of Polymer-based Electrochromic Devices

Solid-state flexible polymer-based electrochromic devices are fabricated continuously by stacking layers in one direction. This novel bottom-up approach with no need for a lamination step is realized through in situ photo-crosslinking of the electrolyte using a "curing-chamber" fitted to a roll-coater, which lowers the oxygen concentration at the electrolyte surface. This enables fully printed and 2D patterned organic electrochromics.

From the Bottom Up – Flexible Solid State Electrochromic Devices

Manufacture and demonstration of organic photovoltaic‐powered electrochromic displays using roll coating methods and printable electrolytes

Indium-doped tin oxide free electrochromic devices are prepared by coating electrochromic polymers onto polyethylene terephthalate substrates encompassing two different silver grids as electrodes. One design comprises a flexoprinted highly conductive silver grid electrode, yielding electrochromic devices with a response time of 2 s for an optical contrast of 27%. The other design utilizes an embedded silver grid electrode whereupon response times of 0.5 s for a 30% optical contrast are realized when oxidizing the device. A commercially available conductive poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate acid) formulation (PEDOT:PSS) is coated onto the silver grids as a charge balancing polymer, and is in this setting found to be superior to a polypyrrole previously employed in electrochromic devices. In addition, the PEDOT:PSS layer increases the conductivity in the hexagonal grid structure.

Fast Switching ITO Free Electrochromic Devices

We have used photoluminescence spectroscopy to investigate the influence of interface roughness in GaAs/AlAs quantum wells on their optical properties over a wide continuous range of well thicknesses. In order to compare different correlation lengths of the in-plane disorder potential, the wells were fabricated with growth interruption at both, one, or neither of the interfaces. Growth-interruption increases the correlation length of the monolayer-island structure on the surface, which gives rise to a long-range interface roughness after overgrowth. The relation between the correlation lengths of the in-plane disorder potential and the exciton localization length determines the spectral shape of the exciton luminescence. When the correlation length of the in-plane disorder potential is larger than the exciton localization length, the excitonic spectrum splits up into discrete peaks, stemming from regions differing in effective thickness by an integral number of monolayers. The energies of monolayers peaks, taking into account the in-plane localization energy, are found to be reproducible in wafers grown under similar conditions. We conclude that atomically smooth growth islands are formed on both AlAs and GaAs surfaces after growth interruption. During overgrowth, surface segregation leads to the generation of an atomic-scale disorder in the first overgrown monolayers. This results in an additional in-plane disorder potential with a much shorter correlation length than the original surface. It also modifies the shape of the well potential in the growth direction, as we have modelled by growth simulations, blueshifting the excitonic transition energies with respect to a square-well model.

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J.R. Jensen

Papers

Development and Manufacture of Polymer-based Electrochromic Devices

From the Bottom Up – Flexible Solid State Electrochromic Devices

Manufacture and demonstration of organic photovoltaic‐powered electrochromic displays using roll coating methods and printable electrolytes

Fast Switching ITO Free Electrochromic Devices

Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells