J
Jaan Aarik
Researcher at University of Tartu
Publications - 180
Citations - 6927
Jaan Aarik is an academic researcher from University of Tartu. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 44, co-authored 173 publications receiving 6458 citations. Previous affiliations of Jaan Aarik include University of Helsinki.
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Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films
TL;DR: In this paper, atomic layer growth of hafnium dioxide from HfCl4 and H2O has been studied at substrate temperatures ranging from 180-600°C.
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Morphology and structure of TiO2 thin films grown by atomic layer deposition
TL;DR: In this article, atomic layer deposition of TiO 2 films from TiCl 4 and H 2 O was studied at reactor temperatures 100-500°C and the surface morphology and optical losses of the films were related to the film structure.
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Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition
TL;DR: In this article, the dependence of optical characteristics on the structure of atomic layer-deposited titania (TiO 2 ) thin films has been studied and the formation of preferentially oriented crystal (anatase) structure contributes to this increase of refractive index most significantly.
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Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen
Kaupo Kukli,Mikko Ritala,Jonas Sundqvist,Jaan Aarik,Jun Lu,Timo Sajavaara,Markku Leskelä,Anders Hårsta +7 more
TL;DR: In this article, polycrystalline monoclinic HfO2 films were atomic layer deposited on Si(100) substrates by a nonhydrous carbon-free process of HfI4 and O2.
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Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism
TL;DR: In this paper, a real-time quartz crystal microbalance method was used to determine the growth rate of TiCl 4/H 2 O ALD at substrate temperatures of 100-400°C.