Mikko Ritala

TL;DR: The principles of the atomic layer deposition (ALD) method are presented in this paper emphasizing the importance of precursor and surface chemistry, with a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps.

TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.

TL;DR: The self-limiting growth mechanism characteristic to atomic layer deposition (ALD) facilitates the control of film thickness at the atomic level and allows deposition on large and complex surfaces, which makes ALD a very promising technique for future integrated circuits.

TL;DR: This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.

TL;DR: The atomic layer deposition (ALD) method as discussed by the authors is a chemical gas phase thin film deposition method based on alternate saturative surface reactions, in which the source vapors are pulsed into the reactor alternately, one at a time, separated by purging or evacuation periods.