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Jack Chan

Researcher at National University of Singapore

Publications -  38
Citations -  1631

Jack Chan is an academic researcher from National University of Singapore. The author has contributed to research in topics: Cancer & Medicine. The author has an hindex of 10, co-authored 32 publications receiving 1433 citations. Previous affiliations of Jack Chan include National Center for Charitable Statistics & University of Virginia.

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The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

TL;DR: In this article, the effects of residues introduced during the transfer of chemical vapor deposited graphene from a Cu substrate to an insulating (SiO2) substrate on the physical and electrical properties of the transferred graphene are studied X-ray photoelectron spectroscopy and atomic force microscopy.
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Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition.

TL;DR: In this paper, the authors show that the mobility of CVD graphene devices on SiO2 is limited by trapped water between the graphene and substrate, impurities introduced during the transfer process and adsorbates acquired from the ambient.
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Effective mobility of single-layer graphene transistors as a function of channel dimensions

TL;DR: A detailed analysis of the extracted back gated FET mobility as a function of channel length, channel width, and underlying oxide thickness for both exfoliated and chemical vapor deposited (CVD) graphene is presented in this article.
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Novel therapeutic avenues in triple-negative breast cancer: PI3K/AKT inhibition, androgen receptor blockade, and beyond:

TL;DR: The preclinical rationale, predictive biomarkers, efficacy, and safety data from early phase trials, and the future directions for these two biomarker-directed treatment approaches in TNBC are reviewed.
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Raman study of Fano interference in p-type doped silicon

TL;DR: In this article, the effect of intervalence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitationwavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm).