J
Jan Blochwitz
Researcher at Dresden University of Technology
Publications - 24
Citations - 2106
Jan Blochwitz is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: OLED & Layer (electronics). The author has an hindex of 12, co-authored 24 publications receiving 2073 citations.
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Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material
TL;DR: In this paper, the authors show that doping of the transport layers can strikingly improve the properties of organic light emitting diodes (OLEDs), and they show that the electroluminescence onset voltage of Diodes containing an vanadyl-phthalocyanine (VOPc) hole transport layer intentionally doped with tetrafluorotetracyano-quinodimethan (F4-TCNQ) is reduced by up to an order of magnitude compared to OLED with undoped VOPc.
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Low-voltage organic electroluminescent devices using pin structures
TL;DR: In this article, a small-molecule organic light-emitting diode where the intrinsic emitter layer is sandwiched by n- and p-doped transport layers with appropriate blocking layers was realized.
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Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer
TL;DR: In this article, the authors demonstrate the use of a p-doped amorphous starburst amine, 4, 4′, 4″-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs).
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Interface electronic structure of organic semiconductors with controlled doping levels
Jan Blochwitz,Torsten Fritz,Martin Pfeiffer,Karl Leo,Dana M. Alloway,Paul A. Lee,Neal R. Armstrong +6 more
TL;DR: In this article, the properties of inorganic-organic interfaces were investigated by ultraviolet and X-ray photoemission spectroscopy (UPS and XPS) and transport experiments.
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Enhanced Hole Injection into Amorphous Hole-Transport Layers of Organic Light-Emitting Diodes Using Controlled p-Type Doping
TL;DR: In this article, a hole-transport layer using the starburst amine 4,4′,4″-tris(N,N-diphenyl-amino)triphenylamine (TDATA) p-doped with a very strong acceptor, tetrafluoro-tetracyano-quinodimethane (F4-TCNQ) by controlled coevaporation was demonstrated.