Atomic layer deposition: an overview.

To realize graphene-based electronics, various types of graphene are required; thus, modulation of its electrical properties is of great importance. Theoretic studies show that intentional doping is a promising route for this goal, and the doped graphene might promise fascinating properties and widespread applications. However, there is no experimental example and electrical testing of the substitutionally doped graphene up to date. Here, we synthesize the N-doped graphene by a chemical vapor deposition (CVD) method. We find that most of them are few-layer graphene, although single-layer graphene can be occasionally detected. As doping accompanies with the recombination of carbon atoms into graphene in the CVD process, N atoms can be substitutionally doped into the graphene lattice, which is hard to realize by other synthetic methods. Electrical measurements show that the N-doped graphene exhibits an n-type behavior, indicating substitutional doping can effectively modulate the electrical properties of graphene. Our finding provides a new experimental instance of graphene and would promote the research and applications of graphene.

Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties

Atomic layer deposition(ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions,reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

All battery technologies are known to suffer from kinetic problems linked to the solid-state diffusion of Li in intercalation electrodes, the conductivity of the electrolyte in some cases and the quality of interfaces. For Li-ion technology the latter effect is especially acute when conversion rather than intercalation electrodes are used. Nano-architectured electrodes are usually suggested to enhance kinetics, although their realization is cumbersome. To tackle this issue for the conversion electrode material Fe3O4, we have used a two-step electrode design consisting of the electrochemically assisted template growth of Cu nanorods onto a current collector followed by electrochemical plating of Fe3O4. Using such electrodes, we demonstrate a factor of six improvement in power density over planar electrodes while maintaining the same total discharge time. The capacity at the 8C rate was 80% of the total capacity and was sustained over 100 cycles. The origin of the large hysteresis between charge and discharge, intrinsic to conversion reactions, is discussed and approaches to reduce it are proposed. We hope that such findings will help pave the way for the use of conversion reaction electrodes in future-generation Li-ion batteries.

High rate capabilities Fe3O4-based Cu nano-architectured electrodes for lithium-ion battery applications.

Chemical vapour deposition of coatings

The decreasing size and increasing complexity of the components in future microelectronics devices present a great challenge in the development of new deposition techniques. One method for the deposition of semiconductor materials which has generated considerable interest is atomic layer epitaxy (ALE). This method has been shown to yield films with excellent step coverage and high conformity, even on very complex shaped substrates. In this paper we report, for the first time, the deposition of copper using the ALE technique. The films were deposited on tantalum substrates using copper(I) chloride as the precursor and hydrogen as the reducing agent. The films were found to be polycrystalline and practically free from texture. They were also very low in chlorine contamination and possessed a rather rough surface morphology. An initial fast substrate reduction, yielding a film thickness of approximately 300 A, was observed, the rate determining step being the reaction of hydrogen with the adsorbed copper chloride. The activation energy for this step was estimated to be 80 kJ mol−1.

Atomic Layer Epitaxy of Copper on Tantalum

The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop ...

Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures

The corrosion behaviour of Ti/TiN multilayer coated tool steel has been investigated by potentiodynamic measurements in 0.1 M H2SO4 and compared with single layer coatings of Ti and TiN, respectively. All the coatings had a total thickness of about 1 mu

Jan-Otto Carlsson

Papers

Atomic Layer Epitaxy of Copper on Tantalum

Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures

Corrosion behaviour of Ti/TiN multilayer coated tool steel

Atomic layer deposition of BN thin films

Growth of copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors