Journal ArticleDOI
Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures
TLDR
The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+ NH3 and TiCl 4+Zn+NH 3, as a diffusion barrier between cop...Abstract:
The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between cop ...read more
Citations
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Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Chemical vapour deposition of coatings
TL;DR: Chemical Vapour Deposition (CVD) involves the chemical reactions of gaseous reactants on or near the vicinity of a heated substrate surface as mentioned in this paper, which can provide highly pure materials with structural control at atomic or nanometer scale level.
Journal ArticleDOI
Atomic layer deposition (ALD): from precursors to thin film structures
Markku Leskelä,Mikko Ritala +1 more
TL;DR: The principles of the atomic layer deposition (ALD) method are presented in this paper emphasizing the importance of precursor and surface chemistry, with a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps.
Journal ArticleDOI
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Journal ArticleDOI
Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
TL;DR: A review of the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication can be found in this paper, where the authors provide a deeper understanding about the underlying deposition process and the physical and electrical properties of the deposited films.
References
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Journal ArticleDOI
Dislocation Etch for (100) Planes in Silicon
TL;DR: In this paper, a dilute aqueous solution of an alkali dichromate and hydrofluoric acid is used to reveal dislocations and other lattice defects in (100) planes of silicon.
Journal ArticleDOI
Atomic layer epitaxy
TL;DR: Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals.
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Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition
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Atomic Layer Epitaxy Growth of TiN Thin Films
TL;DR: In this paper, two different chemical schemes were studied: a direct reaction between the alternately supplied TiCl{sub 4} and NH{sub 3}, and a process employing a reducing zinc pulse given after the TiCl sub 4 dose.
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Reactively sputtered TiN as a diffusion barrier between Cu and Si
TL;DR: In this paper, the properties of 100nm-thick Ti55N45 and Ti45N55 films as diffusion barriers between silicon substrates and thin Cu films were studied by sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, secondary ion mass spectrometer, transmission electron microscopy, scanning electron microscope, energy dispersive x-ray spectrography, xray diffractometry, and diode leakage current measurements.