O
Olaf Krüger
Researcher at Ferdinand-Braun-Institut
Publications - 40
Citations - 412
Olaf Krüger is an academic researcher from Ferdinand-Braun-Institut. The author has contributed to research in topics: Wafer & Laser. The author has an hindex of 11, co-authored 40 publications receiving 368 citations. Previous affiliations of Olaf Krüger include Leibniz Institute for Neurobiology.
Papers
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Journal ArticleDOI
SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications
Nils Weimann,D. Stoppel,M. I. Schukfeh,Maruf Hossain,Thualfiqar Al-Sawaf,B. Janke,Ralf Doerner,Siddharta Sinha,F.J. Schmuckle,Olaf Krüger,Viktor Krozer,Wolfgang Heinrich,Marco Lisker,A. Kruger,Anton Datsuk,Chafik Meliani,Bernd Tillack +16 more
TL;DR: In this paper, a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolar-complementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process is presented.
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Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Hanno Küpers,Ryan B. Lewis,Abbes Tahraoui,Mathias Matalla,Olaf Krüger,Faebian Bastiman,Henning Riechert,Lutz Geelhaar +7 more
TL;DR: In this article, a two-step growth approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy was developed. But the authors did not consider the shape variation of NWs during elongation.
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Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
Deepak Prasai,Wilfred John,Leonhard Dr. Weixelbaum,Olaf Krüger,Günter Wagner,P. Sperfeld,Stefan Nowy,D. Friedrich,S. Winter,Tilman Weiss +9 more
TL;DR: In this article, the behavior of the photocurrent response under UV light irradiation using a low pressure mercury UV-C lamp and a medium pressure mercury discharge lamp (17 mW/cm²) has been studied.
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Semi‐polar (112¯2)‐GaN templates grown on 100 mm trench‐patterned r‐plane sapphire
Frank Brunner,Francis Edokam,Ute Zeimer,Wilfred John,Deepak Prasai,Olaf Krüger,Markus Weyers +6 more
TL;DR: In this paper, the successful realization of high-quality semi-polar -GaN templates grown on 100mm diameter r-plane patterned sapphire was described, which achieved threading dislocation densities of about 2'×'108'cm−2 and basal stacking fault densities in the order of 1'× '103' cm−1.
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Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Hanno Küpers,Abbes Tahraoui,Ryan B. Lewis,Sander Rauwerdink,Mathias Matalla,Olaf Krüger,Faebian Bastiman,Henning Riechert,Lutz Geelhaar +8 more
TL;DR: In this paper, the authors show that boiling the substrate in ultrapure water leads to a significant improvement in the vertical yield of Ga-assisted GaAs nanowires (NWs) grown on substrates patterned by electron-beam lithography (EBL).