Jani Kotakoski

TL;DR: In this article, the present knowledge about point and line defects in graphene are reviewed and particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications.

TL;DR: It is shown that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms, and this results shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of T MDs.

TL;DR: This work creates an sp2-hybridized one-atom-thick flat carbon membrane with a random arrangement of polygons, including four-membered carbon rings that possess a band gap, which may open new possibilities for engineering graphene-based electronic devices.

TL;DR: An accurate measurement and a quantitative analysis of electron-beam-induced displacements of carbon atoms in single-layer graphene show that a static lattice approximation is not sufficient to describe knock-on damage in this material, while a very good agreement between calculated and experimental cross sections is obtained.

TL;DR: In this paper, the effects of ion irradiation on graphene were studied using atomistic computer simulations based on analytical potential and density functional theory models, and the authors identified the types and concentrations of defects which appeared in graphene under impacts of various ions with energies ranging from tens of electron volts to mega-electron volts.