Showing papers by "Jason R. Petta published in 2010"

Quantum Coherence in a One-Electron Semiconductor Charge Qubit

Abstract: We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ∼7 ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.

A Coherent Beam Splitter for Electronic Spin States

Abstract: Rapid coherent control of electron spin states is required for implementation of a spin-based quantum processor. We demonstrated coherent control of electronic spin states in a double quantum dot by sweeping an initially prepared spin-singlet state through a singlet-triplet anticrossing in the energy-level spectrum. The anticrossing serves as a beam splitter for the incoming spin-singlet state. When performed within the spin-dephasing time, consecutive crossings through the beam splitter result in coherent quantum oscillations between the singlet state and a triplet state. The all-electrical method for quantum control relies on electron-nuclear spin coupling and drives single-electron spin rotations on nanosecond time scales.

Correlating the Nanostructure and Electronic Properties of InAs Nanowires

Abstract: The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ∼4× larger in the nominally defect free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.

Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot

Abstract: The influence of gate-controlled two-electron exchange on the relaxation of nuclear polarization in small ensembles (N∼10(6)) of nuclear spins is examined in a GaAs double quantum dot system. Waiting in the (2,0) charge configuration, which has large exchange splitting, reduces the nuclear diffusion rate compared to that of the (1,1) configuration. Matching exchange to Zeeman splitting significantly increases the nuclear diffusion rate.

Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot

Abstract: The influence of gate-controlled two-electron exchange on the relaxation of nuclear polarization in small ensembles (N∼10(6)) of nuclear spins is examined in a GaAs double quantum dot system. Waiting in the (2,0) charge configuration, which has large exchange splitting, reduces the nuclear diffusion rate compared to that of the (1,1) configuration. Matching exchange to Zeeman splitting significantly increases the nuclear diffusion rate.

Harnessing the GaAs quantum dot nuclear spin bath for quantum control

Abstract: We theoretically demonstrate that nuclear spins can be harnessed to coherently control two-electron spin states in a double quantum dot. Hyperfine interactions lead to an avoided crossing between the spin singlet state and the ${m}_{\text{s}}=+1$ triplet state, ${\text{T}}_{+}$. We show that a coherent superposition of singlet and triplet states can be achieved using finite-time Landau-Zener-St\"uckelberg interferometry. In this system the coherent rotation rate is set by the Zeeman energy, resulting in $\ensuremath{\sim}1\text{ }\text{ns}$ single spin rotations. We analyze the coherence of this spin qubit by considering the coupling to the nuclear spin bath and show that ${T}_{2}^{\ensuremath{\ast}}\ensuremath{\sim}16\text{ }\text{ns}$, in good agreement with experimental data. Our analysis further demonstrates that efficient single qubit and two-qubit control can be achieved using Landau-Zener-St\"uckelberg interferometry.

Correlating the nanostructure and electronic properties of InAs nanowires

Abstract: The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in the nominally defect-free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.

A coherent beam splitter for electronic spin states

Abstract: Rapid coherent control of electron spin states is required for implementation of a spin-based quantum processor. We demonstrated coherent control of electronic spin states in a double quantum dot by sweeping an initially prepared spin-singlet state through a singlet-triplet anticrossing in the energy-level spectrum. The anticrossing serves as a beam splitter for the incoming spin-singlet state. When performed within the spin-dephasing time, consecutive crossings through the beam splitter result in coherent quantum oscillations between the singlet state and a triplet state. The all-electrical method for quantum control relies on electron-nuclear spin coupling and drives single-electron spin rotations on nanosecond time scales.

Development and operation of research-scale III–V nanowire growth reactors

Abstract: III–V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2×10−9 Torr. A load lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities appr...