다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

http://science.sciencemag.org/content/sci/294/5546/1488.full.pdf

Spintronics: a spin-based electronics vision for the future.

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

/pdf/spintronics-fundamentals-and-applications-2dx38n6phu.pdf

Spintronics: Fundamentals and applications

In the light of the tremendous progress that has been made in raising the transition temperature of the copper oxide superconductors (for a review, see ref. 1), it is natural to wonder how high the transition temperature, Tc, can be pushed in other classes of materials. At present, the highest reported values of Tc for non-copper-oxide bulk superconductivity are 33 K in electron-doped CsxRbyC60 (ref. 2), and 30 K in Ba1-xKxBiO3 (ref. 3). (Hole-doped C60 was recently found4 to be superconducting with a Tc as high as 52 K, although the nature of the experiment meant that the supercurrents were confined to the surface of the C60 crystal, rather than probing the bulk.) Here we report the discovery of bulk superconductivity in magnesium diboride, MgB2. Magnetization and resistivity measurements establish a transition temperature of 39 K, which we believe to be the highest yet determined for a non-copper-oxide bulk superconductor.

Superconductivity at 39 K in magnesium diboride

The electronic spin degrees of freedom in semiconductors typically have decoherence times that are several orders of magnitude longer than other relevant time scales. A solid-state quantum computer based on localized electron spins as qubits is therefore of potential interest. Here, a scheme that realizes controlled interactions between two distant quantum dot spins is proposed. The effective long-range interaction is mediated by the vacuum field of a high finesse microcavity. By using conduction-band-hole Raman transitions induced by classical laser fields and the cavity-mode, parallel controlled-not operations, and arbitrary single qubit rotations can be realized.

/pdf/quantum-information-processing-using-quantum-dot-spins-and-52atpozac1.pdf

Quantum information processing using quantum dot spins and cavity QED

We consider a quantum-gate mechanism based on electron spins in coupled semiconductor quantum dots. Such gates provide a general source of spin entanglement and can be used for quantum computers. We determine the exchange coupling $J$ in the effective Heisenberg model as a function of magnetic $(B)$ and electric fields, and of the interdot distance $a$ within the Heitler-London approximation of molecular physics. This result is refined by using $\mathrm{sp}$ hybridization, and by the Hund-Mulliken molecular-orbit approach, which leads to an extended Hubbard description for the two-dot system that shows a remarkable dependence on $B$ and $a$ due to the long-range Coulomb interaction. We find that the exchange $J$ changes sign at a finite field (leading to a pronounced jump in the magnetization) and then decays exponentially. The magnetization and the spin susceptibilities of the coupled dots are calculated. We show that the dephasing due to nuclear spins in GaAs can be strongly suppressed by dynamical nuclear-spin polarization and/or by magnetic fields.

/pdf/coupled-quantum-dots-as-quantum-gates-1a6g2nyduo.pdf

Coupled quantum dots as quantum gates

The main characteristics of good qubits are long coherence times in combination with fast operating times. It is well known that carbon-based materials could increase the coherence times of spin qubits, which are among the most developed solid-state qubits. Here, we propose how to form spin qubits in graphene quantum dots. A crucial requirement to achieve this goal is to find quantum-dot states where the usual valley degeneracy in bulk graphene is lifted. We show that this problem can be avoided in quantum dots based on ribbons of graphene with armchair boundaries. The most remarkable new feature of the proposed spin qubits is that, in an array of many qubits, it is possible to couple any two of them via Heisenberg exchange with the others being decoupled by detuning. This unique feature is a direct consequence of the quasi-relativistic spectrum of graphene.

/pdf/spin-qubits-in-graphene-quantum-dots-4byyy2fpl2.pdf

Spin qubits in graphene quantum dots

We present k.p Hamiltonians parametrized by ab initio density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the K , Q , Γ , and M points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides (TMDCs). We discuss the parametrization of the essential parts of the k.p[ Hamiltonians for MoS2 , MoSe2 , MoTe2 , WS2 , WSe2 , and WTe2 , including the spin-splitting and spin-polarization of the bands, and we briefly review the vibrational properties of these materials. We then use k.p theory to analyse optical transitions in two-dimensional TMDCs over a broad spectral range that covers the Van Hove singularities in the band structure (the M points). We also discuss the visualization of scanning tunnelling microscopy maps.

https://iopscience.iop.org/article/10.1088/2053-1583/2/2/022001/pdf

k · p theory for two-dimensional transition metal dichalcogenide semiconductors

Various physical implementations of quantum computers are being investigated, although the requirements that must be met to make such devices a reality in the laboratory at present involve capabilities well beyond the state of the art. Recent solid-state approaches have used quantum dots, donor-atom nuclear spins or electron spins; in these architectures, the basic two-qubit quantum gate is generated by a tunable exchange interaction between spins (a Heisenberg interaction), whereas the one-qubit gates require control over a local magnetic field. Compared to the Heisenberg operation, the one-qubit operations are significantly slower, requiring substantially greater materials and device complexity--potentially contributing to a detrimental increase in the decoherence rate. Here we introduced an explicit scheme in which the Heisenberg interaction alone suffices to implement exactly any quantum computer circuit. This capability comes at a price of a factor of three in additional qubits, and about a factor of ten in additional two-qubit operations. Even at this cost, the ability to eliminate the complexity of one-qubit operations should accelerate progress towards solid-state implementations of quantum computation.

Guido Burkard

Papers

Quantum information processing using quantum dot spins and cavity QED

Coupled quantum dots as quantum gates

Spin qubits in graphene quantum dots

k · p theory for two-dimensional transition metal dichalcogenide semiconductors

Universal quantum computation with the exchange interaction.