J
Jayeeta Bhattacharyya
Researcher at Indian Institute of Technology Madras
Publications - 38
Citations - 319
Jayeeta Bhattacharyya is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Exciton & Photoluminescence. The author has an hindex of 9, co-authored 34 publications receiving 283 citations. Previous affiliations of Jayeeta Bhattacharyya include Helmholtz-Zentrum Dresden-Rossendorf & Tata Institute of Fundamental Research.
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Electronic band structure of wurtzite InN around the fundamental gap in the presence of biaxial strain
TL;DR: In this article, a theoretical study of the electronic band structure of wurtzite InN films under biaxial strain in the C-plane and in planes that correspond to non-polar orientations such as the A-plane (1120) and the M-plane(1100) was performed under the k p perturbation theory approach using the Bir-Pikus Hamiltonian.
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Are AlN and GaN substrates useful for the growth of non‐polar nitride films for UV emission? The oscillator strength perspective
TL;DR: In this paper, the effect of strain on the oscillator strengths of interband transitions in wurtzite group-III-nitride films suitable for ultraviolet light emission applications was investigated.
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Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots
Jayeeta Bhattacharyya,Martin Wagner,Manfred Helm,Mark Hopkinson,Luke R. Wilson,Harald Schneider +5 more
TL;DR: In this paper, optical properties and interdot transfer dynamics of trapped carriers in InGaAs quantum dots (QDs) are investigated for time-delayed interband and intraband excitations.
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Charge transfer mediated photoluminescence enhancement in carbon dots embedded in TiO2 nanotube matrix
TL;DR: In this article, the authors reported a nearly three times increase in the total photoluminescence emission of CQD films by depositing them on TiO2 nanotube (NT) substrates, instead of glass.
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Polarized photovoltage spectroscopy study of InAs∕GaAs(001) quantum dot ensembles
TL;DR: In this paper, the authors studied self-assembled InAs quantum dot ensembles on GaAs(001) substrate using polarized photovoltage spectroscopy and showed that the observed polarization anisotropy can be understood on the basis of a model where an anisotropic two dimensional harmonic oscillator potential represents the lateral confinement of the carriers within the QD in the (001) plane.