J
Jayesh B. Parmar
Researcher at Tata Institute of Fundamental Research
Publications - 13
Citations - 251
Jayesh B. Parmar is an academic researcher from Tata Institute of Fundamental Research. The author has contributed to research in topics: Thin film & Photoluminescence. The author has an hindex of 7, co-authored 13 publications receiving 210 citations.
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Journal ArticleDOI
Emergence of nanoscale inhomogeneity in the superconducting state of a homogeneously disordered conventional superconductor
Anand Kamlapure,Tanmay Das,Somesh Chandra Ganguli,Jayesh B. Parmar,Somnath Bhattacharyya,Pratap Raychaudhuri +5 more
TL;DR: Using scanning tunneling spectroscopy and high resolution scanning transmission electron microscopy, it is experimentally demonstrated that under the competing effects of strong homogeneous disorder and superconducting correlations, thesuperconducting state of a conventional superconductor, NbN, spontaneously segregates into domains.
Journal ArticleDOI
Emergence of nanoscale inhomogeneity in the superconducting state of a homogeneously disordered conventional superconductor, NbN
Anand Kamlapure,Tanmay Das,Somesh Chandra Ganguli,Jayesh B. Parmar,Somnath Bhattacharyya,Pratap Raychaudhuri +5 more
TL;DR: Using scanning tunneling spectroscopy and high-resolution scanning transmission electron microscopy, this article showed that the superconducting state of a conventional superconductor, NbN, spontaneously segregates into domains.
Journal ArticleDOI
Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
Priti Gupta,A. Azizur Rahman,Nirupam Hatui,Jayesh B. Parmar,Bhagyashree A. Chalke,Rudheer D. Bapat,S. C. Purandare,Mandar M. Deshmukh,Arnab Bhattacharya +8 more
TL;DR: In this article, the synthesis and optical characterization of semipolar-oriented III-nitride quantum well (QW) structures obtained by growth on chemical vapor deposited graphene layers using metalorganic vapor phase epitaxy was reported.
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Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD
Amit Pawbake,Amit Pawbake,Azam Mayabadi,Ravindra Waykar,Rupali Kulkarni,Ashok Jadhavar,V. S. Waman,Jayesh B. Parmar,Somnath Bhattacharyya,Yuan-Ron Ma,Rupesh S. Devan,Habib M. Pathan,Sandesh Jadkar +12 more
TL;DR: In this article, the influence of boron doping on structural, optical, morphological and electrical properties of 3C-SiC films have been investigated by using HW-CVD using silane (SiH4)/methane (CH4)/diborane (B2H6) gas mixture.
Journal ArticleDOI
Growth, structural and optical characterization of wurtzite GaP nanowires.
Carina B. Maliakkal,Mahesh Gokhale,Jayesh B. Parmar,Rudheer D. Bapat,Bhagyashree A. Chalke,Sandip Ghosh,Arnab Bhattacharya +6 more
TL;DR: A comprehensive study of the gold-catalyzed growth of GaP NWs via metalorganic vapor phase epitaxy on various crystalline and amorphous substrates is presented and suggests that the WZ-phase GaP has a pseudo-direct bandgap with weak near-band-edge luminescence intensity.