Journal ArticleDOI
Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD
Amit Pawbake,Amit Pawbake,Azam Mayabadi,Ravindra Waykar,Rupali Kulkarni,Ashok Jadhavar,V. S. Waman,Jayesh B. Parmar,Somnath Bhattacharyya,Yuan-Ron Ma,Rupesh S. Devan,Habib M. Pathan,Sandesh Jadkar +12 more
TLDR
In this article, the influence of boron doping on structural, optical, morphological and electrical properties of 3C-SiC films have been investigated by using HW-CVD using silane (SiH4)/methane (CH4)/diborane (B2H6) gas mixture.About:
This article is published in Materials Research Bulletin.The article was published on 2016-04-01. It has received 18 citations till now. The article focuses on the topics: Boron carbide & Boron.read more
Citations
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Journal Article
Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films
TL;DR: In this article, a low-temperature (400 °C) plasma-assisted rf magnetron sputtering deposition of high-quality nanocrystalline SiC films made of uniform-size nanoislands that almost completely cover the Si(100) surface was reported.
Journal ArticleDOI
Biomass-derived carbon/silicon three-dimensional hierarchical nanostructure as anode material for lithium ion batteries
TL;DR: In this article, a hierarchical silicon/carbon nanostructure (3D AC-Si) is applied as the anode material for lithium-ion batteries (LIBs), where encapsulated Si NPs are uniformly bonded over interconnected carbon framework.
Journal ArticleDOI
Neutron Irradiation, Amorphous Transformation and Agglomeration Effects on the Permittivity of Nanocrystalline Silicon Carbide (3C-SiC)
TL;DR: In this article, nanocrystalline 3C-SiC is irradiated by neutron flux (2×1013n/cm2s) up to 20h in the TRIGA Mark II type research reactor.
Journal ArticleDOI
EPR Spectroscopic Studies of Neutron-Irradiated Nanocrystalline Silicon Carbide (3C-SiC)
Elchin Huseynov,Anze Jazbec +1 more
TL;DR: In this paper, the number of paramagnetic centers for different values of g-factor has been calculated appropriate to local cases in nanocrystalline silicon carbide and found that the concentration of free radicals has increased with the g factor.
References
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BookDOI
Amorphous and liquid semiconductors
TL;DR: In this article, the nature of the amorphous state and the electronic properties of the Amorphous Semi-conductors have been investigated in the context of liquid semiconductors.
Journal ArticleDOI
Determination of the thickness and optical constants of amorphous silicon
TL;DR: In this article, a rigorous expression for the transmission of a thin absorbing film on a transparent substrate is manipulated to yield formulae in closed form for the refractive index and absorption coefficient.
Journal ArticleDOI
Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
TL;DR: In this article, the number and nature of the silicon-hydrogen bonds in amorphous silicon films prepared in plasmas either of silane or of hydrogen and argon were studied.
Related Papers (5)
Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition
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Bibhu P. Swain,Rajiv O. Dusane +1 more