Showing papers by "Jean Massies published in 1989"
TL;DR: In this article, the authors used specular beam intensity oscillations to study the interaction of As 2 and As 4 with Ga (001) Ga-rich surface and found that As 2 molecules are more rapidly chemisorbed (incorporated) from the precursor state that As 4 ones.
53 citations
TL;DR: In this paper, it was shown that high quality Ag/Fe superlattices can be grown on (1, ε)-GaAs by molecular beam epitaxy, provided that adequate intermediate layers are interposed between the GaAs substrate and the super-lattice structure.
Abstract: It is shown that high quality Ag/Fe superlattices can be grown on (001) GaAs by molecular beam epitaxy, provided that adequate intermediate layers are interposed between the GaAs substrate and the superlattice structure. In addition to the growth of a GaAs buffer layer, a sufficiently thick Fe nucleation layer is necessary for the further growth of a high quality Ag buffer layer showing clear reflection high‐energy electron diffraction intensity oscillations. This growth sequence ensures the obtention of single‐crystal Ag/Fe superlattices with well‐defined interfaces.
43 citations
TL;DR: In this article, the photoluminescence (PL) features of the grown GaAs/AlxGa1−xAs quantum well and superlattice structures were investigated.
Abstract: GaAs/AlxGa1−xAs quantum well and superlattice structures have been grown at 600 °C by molecular beam epitaxy on GaAs (001) substrates exactly oriented or slightly misoriented towards (111) Ga and (111) As. It is shown that for the growth conditions used, the step orientation (nature) has a striking influence on the photoluminescence (PL) features of the grown structures: steps along [110] (Ga‐type steps) lead to sharp PL lines (pseudosmooth interfaces), while a considerable broadening of the PL (rough interfaces) is obtained when the steps are along [110] (As‐type steps).
24 citations
TL;DR: In this paper, the epitaxial relationships between Fe, Cr and GaAs were determined by reflection high-energy electron diffraction and verified by X-ray diffraction, showing that no significant intermixing occurs in the investigated growth temperature range (approximately 50 to 50°C).
12 citations
TL;DR: Using X-ray photoelectron spectroscopy (XPS) and reflection high energy electron diffraction intensity oscillation measurements, the authors showed that surface segregation occurs during the molecular beam epitaxy of III-V ternaries.
7 citations
TL;DR: In this article, the application of Grazing Incidence X-ray Diffraction to the structural analysis of clean reconstructed surfaces and heterointerfaces is presented, by clearly assessing the nature and position of the atomic species in the first layers.
Abstract: The application of Grazing Incidence X-ray Diffraction to the structural analysis of clean reconstructed surfaces and heterointerfaces is presented. By clearly assessing the nature and position of the atomic species in the first layers, the method has brought a finer description of the bonding schemes at surfaces and interfaces. Examples of elemental and compound semiconductor reconstructed surfaces are discussed together with some metal-semiconductor interfaces.
2 citations
TL;DR: In this article, the normal incidence reflectivity spectrum of excitons in GaAs/Ga1−x Al x As multiple quantum wells is calculated within the local response approximation, and it is shown that the reflectivity lineshape strongly depends on the sample geometry.
Abstract: The normal incidence reflectivity spectrum of excitons in GaAs/Ga1−x Al x As multiple quantum wells is calculated within the local response approximation. It is shown that the reflectivity lineshape strongly depends on the sample geometry. Using realistic parameters of a multiple quantum well structure, we obtain an excellent fit of the experimental reflectivity curve, thus giving exciton energies, oscillator strengths and exciton broadening parameters.