J
Jean Y. Yang
Researcher at Advanced Micro Devices
Publications - 23
Citations - 598
Jean Y. Yang is an academic researcher from Advanced Micro Devices. The author has contributed to research in topics: Layer (electronics) & Photoresist. The author has an hindex of 15, co-authored 23 publications receiving 598 citations. Previous affiliations of Jean Y. Yang include Spansion.
Papers
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Patent
Semiconductor manufacturing resolution enhancement system and method for simultaneously patterning different feature types
TL;DR: In this article, a method and system for making a mask with a transparent substrate thereon is described, where a first resolution enhancement structure is formed on the first portion of the transparent substrate.
Patent
Hard mask process for memory device without bitline shorts
TL;DR: In this paper, the first and second bitlines are implanted and a hard mask layer is deposited over the wordline layer, which is of a material formulated for removal without damaging the charge-trapping dielectric layer.
Patent
Bitline hard mask spacer flow for memory cell scaling
TL;DR: In this article, a semiconductor device consisting of a substrate, buried bitlines formed in the substrate narrower than achievable at a resolution limit of lithography, a doped region formed adjacent at least one of the buried bitslines, and a charge trapping layer disposed over the substrate, was presented.
Patent
Memory wordline hard mask
Arvind Halliyal,Tazrien Kamal,Minh Van Ngo,Mark T. Ramsbey,Jeffrey A. Shields,Jean Y. Yang,Emmanuil Lingunis,Angela T. Hui,Jusuke Ogura +8 more
TL;DR: In this article, the first and second bitlines are implanted and a hard mask material is deposited over the wordline material, which is of a material having the characteristic of being deposited rather than grown.
Patent
Semiconductor memory with deuterated materials
Tazrien Kamal,Arvind Halliyal,Minh Van Ngo,Mark T. Ramsbey,Jean Y. Yang,Hidehiko Shiraiwa,Rinji Sugino +6 more
TL;DR: In this article, a method for manufacturing MirrorBit® Flash memory is described, which includes providing a semiconductor substrate and successively depositing a first insulating layer, a charge-trapping layer, and a second layer.