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Angela T. Hui
Researcher at Advanced Micro Devices
Publications - 53
Citations - 553
Angela T. Hui is an academic researcher from Advanced Micro Devices. The author has contributed to research in topics: Layer (electronics) & Dielectric. The author has an hindex of 13, co-authored 53 publications receiving 553 citations. Previous affiliations of Angela T. Hui include Spansion.
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Patent
Method of forming integrated circuit features by oxidation of titanium hard mask
TL;DR: In this paper, an exemplar method of forming integrated circuit device features by oxidization of titanium hard mask is described, where the material features are made of a material which expands during oxidation.
Patent
Polymer memory device formed in via opening
Nicholas H. Tripsas,Matthew S. Buynoski,Suzette K. Pangrle,Uzodinma Okoroanyanwu,Angela T. Hui,Christopher F. Lyons,Ramkumar Subramanian,Sergey D. Lopatin,Minh Van Ngo,Ashok M. Khathuria,Mark S. Chang,Patrick K. Cheung,Jane V. Oglesby +12 more
TL;DR: In this paper, a method of fabricating a polymer memory device in a via was proposed, which involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least a copper contact in the metal containing layer, forming a dielectric layer over the copper contact, and forming a polymer material in a lower portion of the via.
Patent
Memory wordline hard mask
Arvind Halliyal,Tazrien Kamal,Minh Van Ngo,Mark T. Ramsbey,Jeffrey A. Shields,Jean Y. Yang,Emmanuil Lingunis,Angela T. Hui,Jusuke Ogura +8 more
TL;DR: In this article, the first and second bitlines are implanted and a hard mask material is deposited over the wordline material, which is of a material having the characteristic of being deposited rather than grown.
Patent
Method(s) facilitating formation of memory cell(s) and patterned conductive polymer films
Uzodinma Okoroanyanwu,Suzette K. Pangrle,Matthew Palo Alto Buynoski,Nicholas H. Tripsas,Mark S. Chang,Ramkumar Subramanian,Angela T. Hui +6 more
TL;DR: In this paper, a methodology for forming a memory cell is disclosed, wherein an organic polymer layer is formed over a conductive layer and an electrode layer is created over the organic polymer layers.
Patent
Flash memory with controlled wordline width
Jean Y. Yang,Kouros Ghandehari,Tazrien Kamal,Minh Van Ngo,Mark T. Ramsbey,Dawn M. Hopper,Angela T. Hui,Scott A. Bell +7 more
TL;DR: In this article, a method of manufacturing for a MirrorBit® Flash memory includes depositing a charge-trapping material over a semiconductor substrate and implanting first and second bitlines in the semiconductor substrates.