An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A mean-field phase diagram for conformationally symmetric diblock melts using the standard Gaussian polymer model is presented. Our calculation, which traverses the weak- to strong-segregation regimes, is free of traditional approximations. Regions of stability are determined for disordered (DIS) melts and for ordered structures including lamellae (L), hexagonally packed cylinders (H), body-centered cubic spheres (QIm3m), close-packed spheres (CPS), and the bicontinuous cubic network with Ia3d symmetry (QIa3d). The CPS phase exists in narrow regions along the order−disorder transition for χN ≥ 17.67. Results suggest that the QIa3d phase is not stable above χN ∼ 60. Along the L/QIa3d phase boundaries, a hexagonally perforated lamellar (HPL) phase is found to be nearly stable. Our results for the bicontinuous Pn3m cubic (QPn3m) phase, known as the OBDD, indicate that it is an unstable structure in diblock melts. Earlier approximation schemes used to examine mean-field behavior are reviewed, and compa...

Unifying Weak- and Strong-Segregation Block Copolymer Theories

2.4. Block Copolymer Containing Hybrids 151 3. Block Copolymer Ordering in Thin Films 153 3.1. General Process Steps 153 3.2. Morphology of Thin Films 154 3.3. Thickness-Dependent Nanopatterning 154 3.3.1. Ultrathin Films: Monomolecular Films 155 3.3.2. Sub-L0 Thick Films 155 3.3.3. Thick Films 157 3.4. Placement Control: Directed Self-Assembly (DSA) 162 3.4.1. Topographic Guiding Patterns: Graphoepitaxy 163

Block copolymer based nanostructures: materials, processes, and applications to electronics.

For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal–oxide–semiconductor field-effect transistor (MOSFET). In the current generation of transistors, the transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

Generating laterally ordered, ultradense, macroscopic arrays of nanoscopic elements will revolutionize the microelectronic and storage industries. We used faceted surfaces of commercially available sapphire wafers to guide the self-assembly of block copolymer microdomains into oriented arrays with quasi-long-range crystalline order over arbitrarily large wafer surfaces. Ordered arrays of cylindrical microdomains 3 nanometers in diameter, with areal densities in excess of 10 terabits per square inch, were produced. The sawtoothed substrate topography provides directional guidance to the self-assembly of the block copolymer, which is tolerant of surface defects, such as dislocations. The lateral ordering and lattice orientation of the single-grain arrays of microdomains are maintained over the entire surface. The approach described is parallel, applicable to different substrates and block copolymers, and opens a versatile route toward ultrahigh-density systems.

https://science.sciencemag.org/content/sci/323/5917/1030.full.pdf

Macroscopic 10-terabit-per-square-inch arrays from block copolymers with lateral order.

The present disclosure provides a FinFET element and method of fabricating a FinFET element. The FinFET element includes a germanium-FinFET element (e.g., a multi-gate device including a Ge-fin). In one embodiment, the method of fabrication the Ge-FinFET element includes forming silicon fins on a substrate and selectively growing an epitaxial layer including germanium on the silicon fins. A Ge-condensation process may then be used to selectively oxidize the silicon of the Si-fin and transform the Si-fin to a Ge-fin. The method of fabrication provided may allow use of SOI substrate or bulk silicon substrates, and CMOS-compatible processes to form the Ge-FinFET element.

Method of fabrication of a FinFET element

A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a fin structure over the semiconductor substrate, the fin structure including a first material portion over the semiconductor substrate and a second material portion over the first material portion; forming a gate structure over a portion of the fin structure, such that the gate structure traverses the fin structure, thereby separating a source region and a drain region of the fin structure, wherein the source and drain regions of the fin structure define a channel therebetween; removing the second material portion from the source and drain regions of the fin structure; and after removing the second material portion, forming a third material portion in the source and drain regions of the fin structure.

Fin-like field effect transistor (FinFET) device and method of manufacturing same

Controlling the orientation and lateral ordering of the block copolymer microdomains is essential to their use as templates and scaffolds for the fabrication of nanostructured materials. In addition, a process must be robust, simple to implement, and rapid, and should not introduce disruptive processing steps that would impede their use. Here, we describe thin films of poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) diblock copolymers, spin-coated from mixed solvents that show highly oriented, cylindrical microdomains with a high degree of order on a wide range of substrates, including silicon oxide, polystyrene, germanium, polyimide, and poly(butylene terephthalate). In addition, the preferential solvation of the P4VP block with an alcohol caused a surface reconstruction that resulted in the formation of a nanoporous film upon drying. The evaporation of gold onto the reconstructed films produced thermally stable and reactive ion etching resistant films.

A Simple Route to Highly Oriented and Ordered Nanoporous Block Copolymer Templates

The present disclosure provides a method of manufacturing a microelectronic device. The method includes forming recessed shallow trench isolation (STI) features in a semiconductor substrate, defining a semiconductor region between adjacent two of the recessed STI features; forming a tunnel dielectric feature within the semiconductor region; forming a nitride layer on the recessed STI features and the tunnel dielectric feature; etching the nitride layer to form nitride openings within the recessed STI features; partially removing the recessed STI features through the nitride openings, resulting in gaps between the nitride layer and the recessed STI features; and forming a first dielectric material on surfaces of the nitride layer, sealing the nitride openings.

Jeff J. Xu

Papers

Macroscopic 10-terabit-per-square-inch arrays from block copolymers with lateral order.

Method of fabrication of a FinFET element

Fin-like field effect transistor (FinFET) device and method of manufacturing same

A Simple Route to Highly Oriented and Ordered Nanoporous Block Copolymer Templates

Storage nitride encapsulation for non-planar sonos NAND flash charge retention