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Jen-Kan Yu

Researcher at California Institute of Technology

Publications -  21
Citations -  4299

Jen-Kan Yu is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Etching (microfabrication). The author has an hindex of 15, co-authored 20 publications receiving 4077 citations. Previous affiliations of Jen-Kan Yu include National Taiwan University & Lam Research.

Papers
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Journal ArticleDOI

Silicon nanowires as efficient thermoelectric materials

TL;DR: Independent measurements of the Seebeck coefficient, the electrical conductivity and the thermal conductivity, combined with theory, indicate that the improved efficiency originates from phonon effects, and these results are expected to apply to other classes of semiconductor nanomaterials.
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Reduction of thermal conductivity in phononic nanomesh structures

TL;DR: An approach to independently controlling κ based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film is demonstrated, suggesting that this development is a step towards a coherent mechanism for lowering thermal conductivity.
Journal ArticleDOI

Silicon Nanowires as Efficient Thermoelectric Materials.

TL;DR: In this paper, a single-component system of silicon nanowires for cross-sectional areas of 10nm, 15nm, 20nm, and 20nm was presented, achieving an approximately 100-fold improvement over bulk Si over a broad temperature range.
Journal ArticleDOI

Bright and Efficient, Non-Doped, Phosphorescent Organic Red-Light-Emitting Diodes†

TL;DR: In this paper, a number of metal complexes with the formula (nazo) 2 Ir(Fppz) have been synthesized, including (1), (2), (3), (4), (5), (6), (7), (8), (9), (10), (11), (12), (13), (14), (15), (16), (17), (18), (19), (20), (21), (22), (23), (24), (25), (26), (27), (28), (30
Patent

Internal plasma grid applications for semiconductor fabrication

TL;DR: In this paper, improved methods and apparatus for etching a semiconductor substrate are described. But the method is restricted to the case where the substrate is divided into upper and lower sub-chambers, and the ion-ion plasma may be used to advantage in a variety of etching processes.