J
Jeong-Don Ihm
Researcher at Samsung
Publications - Â 36
Citations - Â 700
Jeong-Don Ihm is an academic researcher from Samsung. The author has contributed to research in topics: Memory controller & NAND gate. The author has an hindex of 10, co-authored 34 publications receiving 563 citations.
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Journal ArticleDOI
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
Dongku Kang,Woopyo Jeong,Chulbum Kim,Doohyun Kim,Yong Sung Cho,Kyung-Tae Kang,Jinho Ryu,Kyung-Min Kang,Sung-Yeon Lee,Wandong Kim,Lee Han-Jun,Jaedoeg Yu,Nayoung Choi,Dong-Su Jang,Cheon An Lee,Young-Sun Min,Moosung Kim,An-Soo Park,Jae-Ick Son,In-Mo Kim,Pansuk Kwak,Bong-Kil Jung,Doo-Sub Lee,Hyung-Gon Kim,Jeong-Don Ihm,Dae-Seok Byeon,Jin-Yup Lee,Ki-Tae Park,Kye-Hyun Kyung +28 more
TL;DR: A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology withDual state machine architecture is proposed to achieve optimal timing for BL and WL, respectively and an embedded ZQ calibration technique with temperature compensation is introduced.
Journal ArticleDOI
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory
Chulbum Kim,Doohyun Kim,Woopyo Jeong,Hyun-Jin Kim,Il Han Park,HyunWook Park,Jong-Hoon Lee,Park Jiyoon,Yang-Lo Ahn,Ji-Young Lee,Seung-Bum Kim,Hyun-Jun Yoon,Jae Doeg Yu,Nayoung Choi,Nahyun Kim,Hwajun Jang,Jonghoon Park,Seung-Hwan Song,Yong-Ha Park,Jinbae Bang,Sanggi Hong,Young-don Choi,Moosung Kim,Hyung-Gon Kim,Pansuk Kwak,Jeong-Don Ihm,Dae Seok Byeon,Jin-Yub Lee,Ki-Tae Park,Kye-Hyun Kyung +29 more
TL;DR: A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory and a novel program method hiding two-page data loading time for performance enhancement and an electrical annealing improving reliability characteristic by removing holes in shallow traps are presented.
Proceedings ArticleDOI
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate
Jae-Woo Im,Woopyo Jeong,Doohyun Kim,Sang-Wan Nam,Dongkyo Shim,Myung-Hoon Choi,Hyun-Jun Yoon,Dae-Han Kim,You-Se Kim,HyunWook Park,Donghun Kwak,Sang-Won Park,Seok-Min Yoon,Wook-Ghee Hahn,Jinho Ryu,Sang-Won Shim,Kyung-Tae Kang,Sung-Ho Choi,Jeong-Don Ihm,Young-Sun Min,In-Mo Kim,Doo-Sub Lee,Ji-Ho Cho,Ohsuk Kwon,Ji-Sang Lee,Moosung Kim,Sang-Hyun Joo,Jae-Hoon Jang,Sang-Won Hwang,Dae-Seok Byeon,Hyang-ja Yang,Ki-Tae Park,Kye-Hyun Kyung,Jeong-Hyuk Choi +33 more
TL;DR: The previously used node-shrinking methodology is facing challenges due to increased cell-to-cell interference and patterning difficulties caused by decreasing dimension, so 3D-stacking technology has been developed.
Journal ArticleDOI
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
Woopyo Jeong,Jae-Woo Im,Doohyun Kim,Sang-Wan Nam,Dongkyo Shim,Myung-Hoon Choi,Hyun-Jun Yoon,Dae-Han Kim,You-Se Kim,HyunWook Park,Donghun Kwak,Sang-Won Park,Seok-Min Yoon,Wook-Ghee Hahn,Jinho Ryu,Sang-Won Shim,Kyung-Tae Kang,Jeong-Don Ihm,In-Mo Kim,Doo-Sub Lee,Ji-Ho Cho,Moosung Kim,Jae-Hoon Jang,Sang-Won Hwang,Dae-Seok Byeon,Hyang-ja Yang,Kitae Park,Kye-Hyun Kyung,Jeong-Hyuk Choi +28 more
TL;DR: The result of long and focused research in 3D stacking technology is developing 128 Gb 3b/cell Vertical NAND with 32 stack WL layers for the first time, which is the smallest128 Gb NAND Flash.
Proceedings ArticleDOI
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory
Chulbum Kim,Ji-Ho Cho,Woopyo Jeong,Park Il-Han,HyunWook Park,Doohyun Kim,Dae-Woon Kang,Sung-Hoon Lee,Ji-Sang Lee,Won-Tae Kim,Park Jiyoon,Yang-Lo Ahn,Ji-Young Lee,Jong-Hoon Lee,Seung-Bum Kim,Hyun-Jun Yoon,Jaedoeg Yu,Nayoung Choi,Yelim Kwon,Nahyun Kim,Hwajun Jang,Jonghoon Park,Seung-Hwan Song,Yong-Ha Park,Jinbae Bang,Sangki Hong,Byung-Hoon Jeong,Hyun-Jin Kim,Chunan Lee,Young-Sun Min,Inryul Lee,In-Mo Kim,Sung-Hoon Kim,Dongkyu Yoon,Ki-Sung Kim,Young-don Choi,Moosung Kim,Hyung-Gon Kim,Pansuk Kwak,Jeong-Don Ihm,Dae-Seok Byeon,Jin-Yub Lee,Kitae Park,Kye-Hyun Kyung +43 more
TL;DR: This work proposes schemes for programming speed improvement and power reduction, and on-chip processing algorithms for error correction for 3D NAND array density scaling issues.